Optical measurements of carrier relaxation and transport in single GaAs v-groove quantum wire structures

Optical measurements of carrier relaxation and transport in single GaAs v-groove quantum wire structures

Single GaAs v-groove quantum wire structures, of varying width, have been studied using near-field and far-field photoluminescence (PL) and photoluminescence excitation (PLE) techniques. Strong non-thermal behaviour has been observed in complex quasi-1D/2D systems at temperatures below 40 K. Spatial...

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Bibliographic Details
Main Authors: Cade, N, Roshan, R, Ryan, J, Maciel, A, Schwarz, A, Schapers, T, Luth, H
Format: Conference item
Published: 2002
Description
Summary:Single GaAs v-groove quantum wire structures, of varying width, have been studied using near-field and far-field photoluminescence (PL) and photoluminescence excitation (PLE) techniques. Strong non-thermal behaviour has been observed in complex quasi-1D/2D systems at temperatures below 40 K. Spatially resolved PL measurements in the presence of an applied voltage provide information about the distribution of current in the grooves. We find evidence of real-space transfer of carriers at higher voltages. (C) 2002 Elsevier Science B.V. All rights reserved.

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