THE GEOMETRY OF MISFIT DISLOCATIONS WITH RESPECT TO THE STRAINED INTERFACE IN [001] IN0.1GA0.9AS/GAAS SINGLE HETEROSTRUCTURES

Podobne zapisy

• EQUILIBRIUM DISSOCIATION CONFIGURATION OF MISFIT DISLOCATIONS IN LOW STRAINED IN0.1GA0.9AS/GAAS SINGLE HETEROSTRUCTURES
  od: Zou, J, i wsp.
  Wydane: (1993)
• Lomer-Cottrell misfit dislocations in [001]In0.2Ga0.8As/GaAs single heterostructures
  od: Zou, J, i wsp.
  Wydane: (1996)
• MISFIT DISLOCATIONS LYING ALONG (100) IN [001] GAAS/IN0.25GA0.75AS/GAAS QUANTUM-WELL HETEROSTRUCTURES
  od: Zou, J, i wsp.
  Wydane: (1994)
• Temperature-dependent generation of misfit dislocations in In0.2Ga0.8As/GaAs single heterostructures
  od: Zou, J, i wsp.
  Wydane: (1996)
• THEORETICAL CONSIDERATION OF MISFIT DISLOCATION NUCLEATION BY PARTIAL DISLOCATIONS IN [001] STRAINED-LAYER HETEROSTRUCTURES
  od: Zou, J, i wsp.
  Wydane: (1993)