A digital quantum Hall effect
The quantum Hall effect in InAs/GaSb heterojunctions at very high fields and low temperatures when both the electrons and holes contribute to the quantized Hall conductance was studied. InAs/GaSb were grown by metal organic vapor phase epitaxy and are known to possess a relatively low level of extri...
Main Authors: | Nicholas, R, Lakrimi, M, Kardynal, B, Khym, S, Mason, N, Rehman, J, Takashina, K, Walker, P, Symons, D, Maude, D, Portal, J |
---|---|
Format: | Journal article |
Language: | English |
Published: |
Elsevier
2000
|
Similar Items
-
Breakdown of the quantum Hall effect in an electron-hole system
by: Takashina, K, et al.
Published: (2001) -
Metal-insulator oscillations in a two-dimensional electron-hole system
by: Nicholas, R, et al.
Published: (2000) -
Minigaps and the quantum Hall effect in broken gap InAs/GaSb heterostructures
by: Nicholas, R, et al.
Published: (1998) -
The quantum Hall effect in an InAs/GaSb based electron-hole system and its current-driven breakdown
by: Takashina, K, et al.
Published: (2002) -
Current-driven breakdown of the quantized Hall states of a broken-gap 2D electron-hole system
by: Takashina, K, et al.
Published: (2006)