CAPACITIVELY COUPLED RF PLASMA SOURCES - A VIABLE APPROACH FOR CVD DIAMOND GROWTH
The means by which microwave and r.f. excitation can stimulate gaseous plasma formation are considered in terms of the requirements for a diamond chemical vapour deposition (CVD) process. It is apparent that capacitively coupled r.f. plasma sources offer distinct practical advantages over microwaves...
Main Authors: | Beckman, J, Jackman, R, Foord, J |
---|---|
Format: | Conference item |
Published: |
1994
|
Similar Items
-
THE GROWTH OF NUCLEATION LAYERS FOR HIGH-QUALITY DIAMOND CVD FROM AN RF PLASMA
by: Jackman, R, et al.
Published: (1995) -
CHEMICAL-VAPOR-DEPOSITION OF DIAMOND FROM A NOVEL CAPACITIVELY COUPLED RF PLASMA SOURCE
by: Jackman, R, et al.
Published: (1995) -
DIAMOND CHEMICAL-VAPOR-DEPOSITION FROM A CAPACITIVELY COUPLED RADIO-FREQUENCY PLASMA
by: Jackman, R, et al.
Published: (1995) -
Formation of diamond and nanocrystalline diamond films by microwave plasma CVD
by: Hiramatsu, M, et al.
Published: (2002) -
The effect of hydrogen on the electronic properties of CVD diamond films
by: Looi, H, et al.
Published: (1999)