Cita APA (7a ed.)

Bonilla, R., Woodcock, F., & Wilshaw, P. (2014). Very low surface recombination velocity in n-type c-Si using extrinsic field effect passivation. American Institute of Physics Inc.

Cita Chicago Style (17a ed.)

Bonilla, R., F. Woodcock, y P. Wilshaw. Very Low Surface Recombination Velocity in N-type C-Si Using Extrinsic Field Effect Passivation. American Institute of Physics Inc, 2014.

Cita MLA (9a ed.)

Bonilla, R., et al. Very Low Surface Recombination Velocity in N-type C-Si Using Extrinsic Field Effect Passivation. American Institute of Physics Inc, 2014.