Very low surface recombination velocity in n-type c-Si using extrinsic field effect passivation
In this article, field-effect surface passivation is characterised as either intrinsic or extrinsic, depending on the origin of the charges present in passivation dielectric layers. The surface recombination velocity of float zone, 1 Ω cm, n-type silicon was reduced to 0.15cm/s, the lowest ever obse...
| Үндсэн зохиолчид: | , , |
|---|---|
| Формат: | Journal article |
| Хэл сонгох: | English |
| Хэвлэсэн: |
American Institute of Physics Inc.
2014
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