Simulation of surface field THz generation in a magnetic field

THz emission from InAs and GaAs surfaces was analyzed under magnetic field. The surfaces were excited with 1 nJ pulses of 1.57 eV photons from a mode-locked Ti:Sapphire laser. Magnetic field enhancement of terahertz (THz) power was attributed to additional charge acceleration under Lorentz force. Si...

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Bibliographic Details
Main Authors: Johnston, M, Corchia, A, McLaughlin, R, Davies, A, Linfield, E, Ritchie, D, Whittaker, D, Arnone, D, Pepper, M
Format: Journal article
Language:English
Published: 2001
Description
Summary:THz emission from InAs and GaAs surfaces was analyzed under magnetic field. The surfaces were excited with 1 nJ pulses of 1.57 eV photons from a mode-locked Ti:Sapphire laser. Magnetic field enhancement of terahertz (THz) power was attributed to additional charge acceleration under Lorentz force. Simulation data showed that the magnetic field dependance of saturation of emitted THz power was due to carrier-carrier scattering and the screening of internal electric fields.