Simulation of surface field THz generation in a magnetic field

THz emission from InAs and GaAs surfaces was analyzed under magnetic field. The surfaces were excited with 1 nJ pulses of 1.57 eV photons from a mode-locked Ti:Sapphire laser. Magnetic field enhancement of terahertz (THz) power was attributed to additional charge acceleration under Lorentz force. Si...

詳細記述

書誌詳細
主要な著者: Johnston, M, Corchia, A, McLaughlin, R, Davies, A, Linfield, E, Ritchie, D, Whittaker, D, Arnone, D, Pepper, M
フォーマット: Journal article
言語:English
出版事項: 2001
その他の書誌記述
要約:THz emission from InAs and GaAs surfaces was analyzed under magnetic field. The surfaces were excited with 1 nJ pulses of 1.57 eV photons from a mode-locked Ti:Sapphire laser. Magnetic field enhancement of terahertz (THz) power was attributed to additional charge acceleration under Lorentz force. Simulation data showed that the magnetic field dependance of saturation of emitted THz power was due to carrier-carrier scattering and the screening of internal electric fields.