DIAMOND CHEMICAL-VAPOR-DEPOSITION FROM A CAPACITIVELY COUPLED RADIO-FREQUENCY PLASMA
Capacitively coupled radio frequency (cc-rf) plasmas offer advantages over microwave (MW) induced plasmas for the growth of large area homogeneous thin films. However, conventionally designed cc-rf sources lead, at best, to extremely poor quality material when diamond growth is attempted. The first...
| Päätekijät: | , , |
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| Aineistotyyppi: | Journal article |
| Kieli: | English |
| Julkaistu: |
1995
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