DIAMOND CHEMICAL-VAPOR-DEPOSITION FROM A CAPACITIVELY COUPLED RADIO-FREQUENCY PLASMA
Capacitively coupled radio frequency (cc-rf) plasmas offer advantages over microwave (MW) induced plasmas for the growth of large area homogeneous thin films. However, conventionally designed cc-rf sources lead, at best, to extremely poor quality material when diamond growth is attempted. The first...
Main Authors: | Jackman, R, Beckman, J, Foord, J |
---|---|
Format: | Journal article |
Language: | English |
Published: |
1995
|
Similar Items
-
CHEMICAL-VAPOR-DEPOSITION OF DIAMOND FROM A NOVEL CAPACITIVELY COUPLED RF PLASMA SOURCE
by: Jackman, R, et al.
Published: (1995) -
CAPACITIVELY COUPLED RF PLASMA SOURCES - A VIABLE APPROACH FOR CVD DIAMOND GROWTH
by: Beckman, J, et al.
Published: (1994) -
Influence of the environment on the surface conductivity of chemical vapor deposition diamond
by: Foord, J, et al.
Published: (2002) -
INTERACTION OF HYDROGEN WITH CHEMICAL-VAPOR-DEPOSITION DIAMOND SURFACES - A THERMAL-DESORPTION STUDY
by: Chua, L, et al.
Published: (1994) -
CHEMICAL VAPOR-DEPOSITION ON SILICON - INSITU SURFACE STUDIES
by: Foord, J, et al.
Published: (1984)