Nature of band-gap states in V-doped TiO2 revealed by resonant photoemission

Nature of band-gap states in V-doped TiO2 revealed by resonant photoemission

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Band-gap states in V-doped TiO2 have been studied by photoemission spectroscopy over a range of photon energies encompassing the Ti 3p and V 3p core thresholds. The states show resonant enhancement at photon energies significantly higher than found for Ti 3d states introduced into TiO2 by oxygen def...

詳細記述

書誌詳細
主要な著者: Morris, D, Dixon, R, Jones, F, Dou, Y, Egdell, R, Downes, S, Beamson, G
フォーマット: Journal article
言語:English
出版事項: American Physical Society 1997
主題:
Chemistry & allied sciences
Inorganic chemistry
その他の書誌記述
要約:Band-gap states in V-doped TiO2 have been studied by photoemission spectroscopy over a range of photon energies encompassing the Ti 3p and V 3p core thresholds. The states show resonant enhancement at photon energies significantly higher than found for Ti 3d states introduced into TiO2 by oxygen deficiency or alkali-metal adsorbates. This demonstrates that the gap states relate to electrons trapped on dopant V cations rather than host Ti cations.

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