Picosecond photoluminescence intensity correlation measurements of hot carriers in GaAs/AlxGa1-xAs quantum wells

Picosecond photoluminescence intensity correlation measurements of hot carriers in GaAs/AlxGa1-xAs quantum wells

अन्य संस्करण दिखाएं (1)

We have measured the energy relaxation of hot carriers in doped and undoped GaAs/AlxGa1-xAs quantum wells by detecting time-resolved hot luminescence using a two-pulse intensity correlation technique. The results are compared with time-dependent intensity correlation functions calculated using a mod...

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मुख्य लेखकों: de Paula, A, Ryan, J, Eakin, H, Tatham, M, Taylor, R, Turberfield, A
स्वरूप: Journal article
भाषा:English
प्रकाशित: Elsevier 1994
विवरण
सारांश:We have measured the energy relaxation of hot carriers in doped and undoped GaAs/AlxGa1-xAs quantum wells by detecting time-resolved hot luminescence using a two-pulse intensity correlation technique. The results are compared with time-dependent intensity correlation functions calculated using a model of energy relaxation by optical phonon interactions which includes non-equilibrium phonon effects. The excellent agreement between calculated and experimental correlation functions shows the great potential of this method in measuring ultrafast relaxation processes.

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