Observation of inter-Landau-level transitions in resonant tunneling between transverse X states in GaAs/AlAs double-barrier structures under hydrostatic pressure

Observation of inter-Landau-level transitions in resonant tunneling between transverse X states in GaAs/AlAs double-barrier structures under hydrostatic pressure

Show other versions (1)

Bibliographic Details
Main Authors:	Smith, J, Klipstein, P, Grey, R, Hill, G
Format:	Journal article
Published:	1998

Similar Items

Observation of inter-Landau-level transitions in resonant tunneling between transverse X states in GaAs/AlAs double-barrier structures under hydrostatic pressure
by: Smith, J, et al.
Published: (1998)

Resonant tunneling between transverse X states in GaAs/AlAs double-barrier structures under elevated hydrostatic pressure
by: Smith, J, et al.
Published: (1998)

Resonant tunneling between transverse X states in GaAs/AlAs double-barrier structures under elevated hydrostatic pressure
by: Smith, J, et al.
Published: (1998)

Magnetotunneling spectroscopy with the field perpendicular to the tunneling direction of the transverse X electrons in GaAs/AlAs double-barrier structures under hydrostatic pressure
by: Smith, J, et al.
Published: (1998)

Magnetotunneling spectroscopy with the field perpendicular to the tunneling direction of the transverse X electrons in GaAs/AlAs double-barrier structures under hydrostatic pressure
by: Smith, J, et al.
Published: (1998)

The role of interface quality in resonant tunneling between transverse X-states in GaAs/AlAs double barrier structures pressurised beyond the type II transition
by: Smith, J, et al.
Published: (1995)

Optical investigation of tunneling in AlAs/GaAs/AlAs double-barrier diodes.
by: Andrews, SR, et al.
Published: (1993)

THE ROLE OF INTERFACE QUALITY IN RESONANT-TUNNELING BETWEEN TRANSVERSE X-STATES IN GAAS/ALAS DOUBLE-BARRIER STRUCTURES PRESSURIZED BEYOND THE TYPE-II TRANSITION
by: Smith, J, et al.
Published: (1995)

Enhancement of 2D → 2D tunneling by Γ-XZ mixing in GaAs/AlAs resonant tunneling structures at high pressure
by: Im, H, et al.
Published: (1999)

Enhancement of 2D -> 2D tunneling by Gamma-X-Z mixing in GaAs/AlAs resonant tunneling structures at high pressure
by: Im, H, et al.
Published: (1999)

Magneto-photoluminescence of GaAs/AlGaAs heterojunctions under hydrostatic pressure
by: Priest, A, et al.
Published: (1998)

The indentation response of GaAs-AlAs heterostructures
by: Castell, M, et al.
Published: (1996)

GaAs/AlAs/AlGaAs quantum well infrared photodetector
by: Fan, Weijun
Published: (2008)

Vertical transport and electroluminescence in InAs/GaSb/InAs structures: GaSb thickness and hydrostatic pressure studies
by: Roberts, M, et al.
Published: (2002)

Resonant Raman scattering from phonons in GaAs/(GaAs)m(AlAs) n quantum wire structures
by: Maciel, A, et al.
Published: (1995)

Resonant Raman scattering from phonons in GaAs/(GaAs)(m)(AlAs)(n) quantum wire structures
by: Maciel, A, et al.
Published: (1996)

Resonant LO phonon enhanced conductivity in GaAs-AlAs superlattices
by: Dalton, K, et al.
Published: (2001)

Intrinsic to extrinsic phonon lifetime transition in a GaAs–AlAs superlattice
by: Hofmann, Felix, et al.
Published: (2013)

Intrinsic to extrinsic phonon lifetime transition in a GaAs-AlAs superlattice.
by: Hofmann, F, et al.
Published: (2013)

Landau assisted vertical transport in MQW p-i-n GaAs/AlGaAs diodes
by: Stone, R, et al.
Published: (1996)

Lifetime of sub-THz coherent acoustic phonons in a GaAs-AlAs superlattice
by: Maznev, A, et al.
Published: (2013)

Lifetime of sub-THz coherent acoustic phonons in a GaAs-AlAs superlattice
by: Maznev, Alexei, et al.
Published: (2013)

Picosecond photoluminescence measurements of Landau level lifetimes and time dependent Landau level linebroadening in modulation-doped GaAs-GaAlAs multiple quantum wells
by: Ryan, J, et al.
Published: (1985)

IN0.2GA0.8AS/GAAS INTERFACE REVEALED BY AN ALAS MARKER LAYER
by: Glaisher, R, et al.
Published: (1993)

Barrier height determination of Au/Oxidized GaAs/n-GaAs using ballistic electron emission spectroscopy
by: Bosman, Michel, et al.
Published: (2013)

Design of resonant-tunneling diodes for a GaAs integrated SRAM
by: Aggarwal, Rajni J
Published: (2008)

Fracture properties of GaAs-AlAs superlattices studied by atomic force microscopy and scanning electron microscopy
by: Castell, M, et al.
Published: (1998)

INTERACTION OF ELECTRONS WITH INTERFACE PHONONS IN GAAS/ALAS AND GAAS/ALGAAS HETEROSTRUCTURES
by: Lugli, P, et al.
Published: (1992)

OPTICAL STUDIES OF TUNNELING IN DOUBLE BARRIER DIODES
by: Andrews, S, et al.
Published: (1991)

Sequential tunnelling in GaAs/AIGaAs superlattices grown by molecular beam epitaxy
by: Han, Zhiyong.
Published: (2008)

Transverse electric dominant intersubband absorption in Si-doped GaInAsN∕GaAs quantum wells
by: Fan, Weijun, et al.
Published: (2013)

Far-infrared modulated photocurrent in GaAs/AlGaAs coupled quantum well tunnelling structures
by: Stone, R, et al.
Published: (1996)

PLASTIC-DEFORMATION UNDER MICROINDENTATIONS IN GAAS/ALAS SUPERLATTICES
by: Castell, M, et al.
Published: (1993)

QUASI-BOND STATES IN AN ASYMMETRIC GAAS-ALAS SUPERLATTICE
by: Singleton, J, et al.
Published: (1987)

INDENTATION PLASTICITY OF SINGLE AND MULTIPLE LAYER GAAS-ALAS HETEROSTRUCTURES
by: Castell, M, et al.
Published: (1993)

A study of InGaP/GaAs/InGaP composite collector double heterojunction bipolar transistor and GaAs delta-doped emitter bipolar junction transistor
by: Lew, Kim Luong.
Published: (2008)

Nature of heterointerfaces in GaAs/InAs and InAs/GaAs axial nanowire heterostructures
by: Paladugu, M, et al.
Published: (2008)

GaAs devices and circuits /
by: 262167 Shur, Michael S.
Published: (1987)

GaAs high temperature optical constants and application to optical monitoring within the MOVPE environment
by: Allwood, D, et al.
Published: (2000)

Initial stages of GaAs/Au eutectic alloy formation for the growth of GaAs nanowires
by: Rosnita, M, et al.
Published: (2012)