Observation of inter-Landau-level transitions in resonant tunneling between transverse X states in GaAs/AlAs double-barrier structures under hydrostatic pressure

Observation of inter-Landau-level transitions in resonant tunneling between transverse X states in GaAs/AlAs double-barrier structures under hydrostatic pressure

अन्य संस्करण दिखाएं (1)

ग्रंथसूची विवरण
मुख्य लेखकों:	Smith, J, Klipstein, P, Grey, R, Hill, G
स्वरूप:	Journal article
प्रकाशित:	1998

समान संसाधन

Observation of inter-Landau-level transitions in resonant tunneling between transverse X states in GaAs/AlAs double-barrier structures under hydrostatic pressure
द्वारा: Smith, J, और अन्य
प्रकाशित: (1998)

Resonant tunneling between transverse X states in GaAs/AlAs double-barrier structures under elevated hydrostatic pressure
द्वारा: Smith, J, और अन्य
प्रकाशित: (1998)

Resonant tunneling between transverse X states in GaAs/AlAs double-barrier structures under elevated hydrostatic pressure
द्वारा: Smith, J, और अन्य
प्रकाशित: (1998)

Magnetotunneling spectroscopy with the field perpendicular to the tunneling direction of the transverse X electrons in GaAs/AlAs double-barrier structures under hydrostatic pressure
द्वारा: Smith, J, और अन्य
प्रकाशित: (1998)

Magnetotunneling spectroscopy with the field perpendicular to the tunneling direction of the transverse X electrons in GaAs/AlAs double-barrier structures under hydrostatic pressure
द्वारा: Smith, J, और अन्य
प्रकाशित: (1998)

The role of interface quality in resonant tunneling between transverse X-states in GaAs/AlAs double barrier structures pressurised beyond the type II transition
द्वारा: Smith, J, और अन्य
प्रकाशित: (1995)

Optical investigation of tunneling in AlAs/GaAs/AlAs double-barrier diodes.
द्वारा: Andrews, SR, और अन्य
प्रकाशित: (1993)

THE ROLE OF INTERFACE QUALITY IN RESONANT-TUNNELING BETWEEN TRANSVERSE X-STATES IN GAAS/ALAS DOUBLE-BARRIER STRUCTURES PRESSURIZED BEYOND THE TYPE-II TRANSITION
द्वारा: Smith, J, और अन्य
प्रकाशित: (1995)

Enhancement of 2D → 2D tunneling by Γ-XZ mixing in GaAs/AlAs resonant tunneling structures at high pressure
द्वारा: Im, H, और अन्य
प्रकाशित: (1999)

Enhancement of 2D -> 2D tunneling by Gamma-X-Z mixing in GaAs/AlAs resonant tunneling structures at high pressure
द्वारा: Im, H, और अन्य
प्रकाशित: (1999)

Resonant LO phonon enhanced conductivity in GaAs-AlAs superlattices
द्वारा: Dalton, K, और अन्य
प्रकाशित: (2001)

Resonant Raman scattering from phonons in GaAs/(GaAs)m(AlAs) n quantum wire structures
द्वारा: Maciel, A, और अन्य
प्रकाशित: (1995)

Resonant Raman scattering from phonons in GaAs/(GaAs)(m)(AlAs)(n) quantum wire structures
द्वारा: Maciel, A, और अन्य
प्रकाशित: (1996)

The indentation response of GaAs-AlAs heterostructures
द्वारा: Castell, M, और अन्य
प्रकाशित: (1996)

GaAs/AlAs/AlGaAs quantum well infrared photodetector
द्वारा: Fan, Weijun
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Magneto-photoluminescence of GaAs/AlGaAs heterojunctions under hydrostatic pressure
द्वारा: Priest, A, और अन्य
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Design of resonant-tunneling diodes for a GaAs integrated SRAM
द्वारा: Aggarwal, Rajni J
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Intrinsic to extrinsic phonon lifetime transition in a GaAs–AlAs superlattice
द्वारा: Hofmann, Felix, और अन्य
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Intrinsic to extrinsic phonon lifetime transition in a GaAs-AlAs superlattice.
द्वारा: Hofmann, F, और अन्य
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Landau assisted vertical transport in MQW p-i-n GaAs/AlGaAs diodes
द्वारा: Stone, R, और अन्य
प्रकाशित: (1996)

Lifetime of sub-THz coherent acoustic phonons in a GaAs-AlAs superlattice
द्वारा: Maznev, A, और अन्य
प्रकाशित: (2013)

Lifetime of sub-THz coherent acoustic phonons in a GaAs-AlAs superlattice
द्वारा: Maznev, Alexei, और अन्य
प्रकाशित: (2013)

Picosecond photoluminescence measurements of Landau level lifetimes and time dependent Landau level linebroadening in modulation-doped GaAs-GaAlAs multiple quantum wells
द्वारा: Ryan, J, और अन्य
प्रकाशित: (1985)

Admittance of a one-dimensional double-barrier resonant tunneling nanostructure
द्वारा: Shangguan, Wang Zuo, और अन्य
प्रकाशित: (2018)

IN0.2GA0.8AS/GAAS INTERFACE REVEALED BY AN ALAS MARKER LAYER
द्वारा: Glaisher, R, और अन्य
प्रकाशित: (1993)

Vertical transport and electroluminescence in InAs/GaSb/InAs structures: GaSb thickness and hydrostatic pressure studies
द्वारा: Roberts, M, और अन्य
प्रकाशित: (2002)

Barrier height determination of Au/Oxidized GaAs/n-GaAs using ballistic electron emission spectroscopy
द्वारा: Bosman, Michel, और अन्य
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Fracture properties of GaAs-AlAs superlattices studied by atomic force microscopy and scanning electron microscopy
द्वारा: Castell, M, और अन्य
प्रकाशित: (1998)

INTERACTION OF ELECTRONS WITH INTERFACE PHONONS IN GAAS/ALAS AND GAAS/ALGAAS HETEROSTRUCTURES
द्वारा: Lugli, P, और अन्य
प्रकाशित: (1992)

OPTICAL STUDIES OF TUNNELING IN DOUBLE BARRIER DIODES
द्वारा: Andrews, S, और अन्य
प्रकाशित: (1991)

Transverse electric dominant intersubband absorption in Si-doped GaInAsN∕GaAs quantum wells
द्वारा: Fan, Weijun, और अन्य
प्रकाशित: (2013)

Sequential tunnelling in GaAs/AIGaAs superlattices grown by molecular beam epitaxy
द्वारा: Han, Zhiyong.
प्रकाशित: (2008)

Interface effects, band overlap and the semimetal to semiconductor transition in InAs/GaSb interband resonant tunnelling diodes
द्वारा: Khan-Cheema, U, और अन्य
प्रकाशित: (1994)

Far-infrared modulated photocurrent in GaAs/AlGaAs coupled quantum well tunnelling structures
द्वारा: Stone, R, और अन्य
प्रकाशित: (1996)

Optically detected cyclotron resonance of GaAs-based semiconductors
द्वारा: Michels, J, और अन्य
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PLASTIC-DEFORMATION UNDER MICROINDENTATIONS IN GAAS/ALAS SUPERLATTICES
द्वारा: Castell, M, और अन्य
प्रकाशित: (1993)

QUASI-BOND STATES IN AN ASYMMETRIC GAAS-ALAS SUPERLATTICE
द्वारा: Singleton, J, और अन्य
प्रकाशित: (1987)

Cyclotron resonance and spin states in GaAs/Ga1-xAlxAs heterojunctions: Experiment and theory
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द्वारा: Ng, Tien Khee.
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INTERSUBBAND RESONANT SCATTERING IN GAAS-GA1-XALXAS HETEROJUNCTIONS
द्वारा: Leadley, D, और अन्य
प्रकाशित: (1992)