BRITTLE TO DUCTILE TRANSITION IN SILICON.
The brittle to ductile transition in silicon is studied by four-point bend testing of specimens containing controlled flaws. A characteristic increase in fracture stress is observed at the transition temperature which is directly correlated to the generation and motion of dislocations at the crack t...
| Main Authors: | , |
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| Format: | Journal article |
| Language: | English |
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Inst of Ceramics
1986
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| _version_ | 1797061821962649600 |
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| author | Samuels, J Roberts, S |
| author_facet | Samuels, J Roberts, S |
| author_sort | Samuels, J |
| collection | OXFORD |
| description | The brittle to ductile transition in silicon is studied by four-point bend testing of specimens containing controlled flaws. A characteristic increase in fracture stress is observed at the transition temperature which is directly correlated to the generation and motion of dislocations at the crack tip. It seems likely that this mechanism will occur in all brittle solids. The effect of doping upon the temperature of the transition is also investigated. It is found that strongly n-doped specimens have a transition temperature about 15 degree C lower than intrinsic specimens. |
| first_indexed | 2024-03-06T20:36:38Z |
| format | Journal article |
| id | oxford-uuid:32df67f5-aa2e-469b-9fb9-551b5cc48fac |
| institution | University of Oxford |
| language | English |
| last_indexed | 2024-03-06T20:36:38Z |
| publishDate | 1986 |
| publisher | Inst of Ceramics |
| record_format | dspace |
| spelling | oxford-uuid:32df67f5-aa2e-469b-9fb9-551b5cc48fac2022-03-26T13:16:40ZBRITTLE TO DUCTILE TRANSITION IN SILICON.Journal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:32df67f5-aa2e-469b-9fb9-551b5cc48facEnglishSymplectic Elements at OxfordInst of Ceramics1986Samuels, JRoberts, SThe brittle to ductile transition in silicon is studied by four-point bend testing of specimens containing controlled flaws. A characteristic increase in fracture stress is observed at the transition temperature which is directly correlated to the generation and motion of dislocations at the crack tip. It seems likely that this mechanism will occur in all brittle solids. The effect of doping upon the temperature of the transition is also investigated. It is found that strongly n-doped specimens have a transition temperature about 15 degree C lower than intrinsic specimens. |
| spellingShingle | Samuels, J Roberts, S BRITTLE TO DUCTILE TRANSITION IN SILICON. |
| title | BRITTLE TO DUCTILE TRANSITION IN SILICON. |
| title_full | BRITTLE TO DUCTILE TRANSITION IN SILICON. |
| title_fullStr | BRITTLE TO DUCTILE TRANSITION IN SILICON. |
| title_full_unstemmed | BRITTLE TO DUCTILE TRANSITION IN SILICON. |
| title_short | BRITTLE TO DUCTILE TRANSITION IN SILICON. |
| title_sort | brittle to ductile transition in silicon |
| work_keys_str_mv | AT samuelsj brittletoductiletransitioninsilicon AT robertss brittletoductiletransitioninsilicon |