Direct observations of atomic structures of defects in GaN by high resolution Z-contrast stem
GaN/(0001)Sapphire grown by low pressure MOVPE is studied by high resolution Z-contrast imaging using STEM. First direct observation of the threading dislocation with edge character shows the atomic core structure, which appears to have a similar configuration to the {10-10} surface. The surfaces of...
| Hlavní autoři: | , , , , , , , |
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| Médium: | Conference item |
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1998
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