Unexpected benefits of rapid growth rate for III-V nanowires.

Unexpected benefits of rapid growth rate for III-V nanowires.

In conventional planar growth of bulk III-V materials, a slow growth rate favors high crystallographic quality, optical quality, and purity of the resulting material. Surprisingly, we observe exactly the opposite effect for Au-assisted GaAs nanowire growth. By employing a rapid growth rate, the resu...

Full description

Bibliographic Details
Main Authors: Joyce, H, Gao, Q, Tan, H, Jagadish, C, Kim, Y, Fickenscher, M, Perera, S, Hoang, T, Smith, L, Jackson, H, Yarrison-Rice, J, Zhang, X, Zou, J
Format: Journal article
Language:English
Published: 2009

Similar Items

Similar Items