High resolution measurements of strain and tilt distributions in SiGe mesas using electron backscatter diffraction
Electron backscatter diffraction allows the elastic strain and rotation tensors to be determined at high spatial resolution and with a strain sensitivity of ∼ 10-4. The technique is used to investigate variations of strains and rotations near the surface of 200 nm thick epitaxial layers of Si0.85 Ge...
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| Format: | Journal article |
| Language: | English |
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2006
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