Observation of type-I and type-II excitons in strained Si/SiGe quantum-well structures

The authors report photoluminescence (PL) measurement on a series of SiSiGe quantum-well structures that had different internal strain distributions. When each sample was placed in a high magnetic field, the field-dependent energy shift of the relevant PL peaks revealed either type-I or type-II exci...

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Bibliographic Details
Main Authors: Wang, K, Huang, W, Cheng, H, Sun, G, Soref, R, Nicholas, R, Suen, Y
Format: Journal article
Language:English
Published: 2007
Description
Summary:The authors report photoluminescence (PL) measurement on a series of SiSiGe quantum-well structures that had different internal strain distributions. When each sample was placed in a high magnetic field, the field-dependent energy shift of the relevant PL peaks revealed either type-I or type-II exciton formation depending on the strain distribution. This observation is in agreement with theoretical modeling. The present investigation shows that type-I band alignment-desired for electroluminescent devices-can be achieved by strain engineering. © 2007 American Institute of Physics.