Observation of type-I and type-II excitons in strained Si/SiGe quantum-well structures
The authors report photoluminescence (PL) measurement on a series of SiSiGe quantum-well structures that had different internal strain distributions. When each sample was placed in a high magnetic field, the field-dependent energy shift of the relevant PL peaks revealed either type-I or type-II exci...
| Main Authors: | , , , , , , |
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| Format: | Journal article |
| Language: | English |
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2007
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| _version_ | 1797062247434944512 |
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| author | Wang, K Huang, W Cheng, H Sun, G Soref, R Nicholas, R Suen, Y |
| author_facet | Wang, K Huang, W Cheng, H Sun, G Soref, R Nicholas, R Suen, Y |
| author_sort | Wang, K |
| collection | OXFORD |
| description | The authors report photoluminescence (PL) measurement on a series of SiSiGe quantum-well structures that had different internal strain distributions. When each sample was placed in a high magnetic field, the field-dependent energy shift of the relevant PL peaks revealed either type-I or type-II exciton formation depending on the strain distribution. This observation is in agreement with theoretical modeling. The present investigation shows that type-I band alignment-desired for electroluminescent devices-can be achieved by strain engineering. © 2007 American Institute of Physics. |
| first_indexed | 2024-03-06T20:42:48Z |
| format | Journal article |
| id | oxford-uuid:34cffe45-876a-4adc-a8c1-a546c1b2edf8 |
| institution | University of Oxford |
| language | English |
| last_indexed | 2024-03-06T20:42:48Z |
| publishDate | 2007 |
| record_format | dspace |
| spelling | oxford-uuid:34cffe45-876a-4adc-a8c1-a546c1b2edf82022-03-26T13:28:29ZObservation of type-I and type-II excitons in strained Si/SiGe quantum-well structuresJournal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:34cffe45-876a-4adc-a8c1-a546c1b2edf8EnglishSymplectic Elements at Oxford2007Wang, KHuang, WCheng, HSun, GSoref, RNicholas, RSuen, YThe authors report photoluminescence (PL) measurement on a series of SiSiGe quantum-well structures that had different internal strain distributions. When each sample was placed in a high magnetic field, the field-dependent energy shift of the relevant PL peaks revealed either type-I or type-II exciton formation depending on the strain distribution. This observation is in agreement with theoretical modeling. The present investigation shows that type-I band alignment-desired for electroluminescent devices-can be achieved by strain engineering. © 2007 American Institute of Physics. |
| spellingShingle | Wang, K Huang, W Cheng, H Sun, G Soref, R Nicholas, R Suen, Y Observation of type-I and type-II excitons in strained Si/SiGe quantum-well structures |
| title | Observation of type-I and type-II excitons in strained Si/SiGe quantum-well structures |
| title_full | Observation of type-I and type-II excitons in strained Si/SiGe quantum-well structures |
| title_fullStr | Observation of type-I and type-II excitons in strained Si/SiGe quantum-well structures |
| title_full_unstemmed | Observation of type-I and type-II excitons in strained Si/SiGe quantum-well structures |
| title_short | Observation of type-I and type-II excitons in strained Si/SiGe quantum-well structures |
| title_sort | observation of type i and type ii excitons in strained si sige quantum well structures |
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