Temperature-dependent charge-carrier dynamics in CH3NH3PbI3 perovskite thin films
The photoluminescence, transmittance, charge-carrier recombination dynamics, mobility, and diffusion length of CH<inf>3</inf>NH<inf>3</inf>PbI<inf>3</inf> are investigated in the temperature range from 8 to 370 K. Profound changes in the optoelectronic properties...
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| Format: | Journal article |
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Wiley
2015
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| _version_ | 1826266727321698304 |
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| author | Milot, R Eperon, G Snaith, H Johnston, M Herz, L |
| author_facet | Milot, R Eperon, G Snaith, H Johnston, M Herz, L |
| author_sort | Milot, R |
| collection | OXFORD |
| description | The photoluminescence, transmittance, charge-carrier recombination dynamics, mobility, and diffusion length of CH<inf>3</inf>NH<inf>3</inf>PbI<inf>3</inf> are investigated in the temperature range from 8 to 370 K. Profound changes in the optoelectronic properties of this prototypical photovoltaic material are observed across the two structural phase transitions occurring at 160 and 310 K. Drude-like terahertz photoconductivity spectra at all temperatures above 80 K suggest that charge localization effects are absent in this range. The monomolecular charge-carrier recombination rate generally increases with rising temperature, indicating a mechanism dominated by ionized impurity mediated recombination. Deduced activation energies E<inf>a</inf> associated with ionization are found to increase markedly from the room-temperature tetragonal (E<inf>a</inf> ≈ 20 meV) to the higher-temperature cubic (E<inf>a</inf> ≈ 200 meV) phase adopted above 310 K. Conversely, the bimolecular rate constant decreases with rising temperature as charge-carrier mobility declines, while the Auger rate constant is highly phase specific, suggesting a strong dependence on electronic band structure. The charge-carrier diffusion length gradually decreases with rising temperature from about 3 μm at -93 °C to 1.2 μm at 67 °C but remains well above the optical absorption depth in the visible spectrum. These results demonstrate that there are no fundamental obstacles to the operation of cells based on CH<inf>3</inf>NH<inf>3</inf>PbI<inf>3</inf> under typical field conditions. |
| first_indexed | 2024-03-06T20:43:21Z |
| format | Journal article |
| id | oxford-uuid:34ff3b10-cc0f-4083-a162-62183ee12bf5 |
| institution | University of Oxford |
| last_indexed | 2024-03-06T20:43:21Z |
| publishDate | 2015 |
| publisher | Wiley |
| record_format | dspace |
| spelling | oxford-uuid:34ff3b10-cc0f-4083-a162-62183ee12bf52022-03-26T13:29:31ZTemperature-dependent charge-carrier dynamics in CH3NH3PbI3 perovskite thin filmsJournal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:34ff3b10-cc0f-4083-a162-62183ee12bf5Symplectic Elements at OxfordWiley2015Milot, REperon, GSnaith, HJohnston, MHerz, LThe photoluminescence, transmittance, charge-carrier recombination dynamics, mobility, and diffusion length of CH<inf>3</inf>NH<inf>3</inf>PbI<inf>3</inf> are investigated in the temperature range from 8 to 370 K. Profound changes in the optoelectronic properties of this prototypical photovoltaic material are observed across the two structural phase transitions occurring at 160 and 310 K. Drude-like terahertz photoconductivity spectra at all temperatures above 80 K suggest that charge localization effects are absent in this range. The monomolecular charge-carrier recombination rate generally increases with rising temperature, indicating a mechanism dominated by ionized impurity mediated recombination. Deduced activation energies E<inf>a</inf> associated with ionization are found to increase markedly from the room-temperature tetragonal (E<inf>a</inf> ≈ 20 meV) to the higher-temperature cubic (E<inf>a</inf> ≈ 200 meV) phase adopted above 310 K. Conversely, the bimolecular rate constant decreases with rising temperature as charge-carrier mobility declines, while the Auger rate constant is highly phase specific, suggesting a strong dependence on electronic band structure. The charge-carrier diffusion length gradually decreases with rising temperature from about 3 μm at -93 °C to 1.2 μm at 67 °C but remains well above the optical absorption depth in the visible spectrum. These results demonstrate that there are no fundamental obstacles to the operation of cells based on CH<inf>3</inf>NH<inf>3</inf>PbI<inf>3</inf> under typical field conditions. |
| spellingShingle | Milot, R Eperon, G Snaith, H Johnston, M Herz, L Temperature-dependent charge-carrier dynamics in CH3NH3PbI3 perovskite thin films |
| title | Temperature-dependent charge-carrier dynamics in CH3NH3PbI3 perovskite thin films |
| title_full | Temperature-dependent charge-carrier dynamics in CH3NH3PbI3 perovskite thin films |
| title_fullStr | Temperature-dependent charge-carrier dynamics in CH3NH3PbI3 perovskite thin films |
| title_full_unstemmed | Temperature-dependent charge-carrier dynamics in CH3NH3PbI3 perovskite thin films |
| title_short | Temperature-dependent charge-carrier dynamics in CH3NH3PbI3 perovskite thin films |
| title_sort | temperature dependent charge carrier dynamics in ch3nh3pbi3 perovskite thin films |
| work_keys_str_mv | AT milotr temperaturedependentchargecarrierdynamicsinch3nh3pbi3perovskitethinfilms AT eperong temperaturedependentchargecarrierdynamicsinch3nh3pbi3perovskitethinfilms AT snaithh temperaturedependentchargecarrierdynamicsinch3nh3pbi3perovskitethinfilms AT johnstonm temperaturedependentchargecarrierdynamicsinch3nh3pbi3perovskitethinfilms AT herzl temperaturedependentchargecarrierdynamicsinch3nh3pbi3perovskitethinfilms |