A picosecond time-resolved photoluminescence microscope with detection at wavelengths greater than 1500 nm

We describe a picosecond resolution time-resolved photoluminescence microscope with high detection sensitivity at wavelengths extending beyond 1500 nm. The instrument performs time-correlated single photon counting using an InGaAs/InP single photon avalanche diode as a detector, and provides tempora...

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Main Authors: Smith, J, Hiskett, P, Gontijo, I, Purves, L, Buller, G
Format: Journal article
Language:English
Published: 2001
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author Smith, J
Hiskett, P
Gontijo, I
Purves, L
Buller, G
author_facet Smith, J
Hiskett, P
Gontijo, I
Purves, L
Buller, G
author_sort Smith, J
collection OXFORD
description We describe a picosecond resolution time-resolved photoluminescence microscope with high detection sensitivity at wavelengths extending beyond 1500 nm. The instrument performs time-correlated single photon counting using an InGaAs/InP single photon avalanche diode as a detector, and provides temporal resolution of less than 300 ps (full width at half maximum) and spatial resolution down to 4 μm at a sample temperature between 4 and 300 K. Analysis of noise characteristics indicates the ability to measure the excess carrier lifetimes of semiconductor devices with excited carrier densities of less than 1014cm-3. © 2001 American Institute of Physics.
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spelling oxford-uuid:35155ac0-2aff-45af-8c85-cf9ad4b0fb912022-03-26T13:29:59ZA picosecond time-resolved photoluminescence microscope with detection at wavelengths greater than 1500 nmJournal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:35155ac0-2aff-45af-8c85-cf9ad4b0fb91EnglishSymplectic Elements at Oxford2001Smith, JHiskett, PGontijo, IPurves, LBuller, GWe describe a picosecond resolution time-resolved photoluminescence microscope with high detection sensitivity at wavelengths extending beyond 1500 nm. The instrument performs time-correlated single photon counting using an InGaAs/InP single photon avalanche diode as a detector, and provides temporal resolution of less than 300 ps (full width at half maximum) and spatial resolution down to 4 μm at a sample temperature between 4 and 300 K. Analysis of noise characteristics indicates the ability to measure the excess carrier lifetimes of semiconductor devices with excited carrier densities of less than 1014cm-3. © 2001 American Institute of Physics.
spellingShingle Smith, J
Hiskett, P
Gontijo, I
Purves, L
Buller, G
A picosecond time-resolved photoluminescence microscope with detection at wavelengths greater than 1500 nm
title A picosecond time-resolved photoluminescence microscope with detection at wavelengths greater than 1500 nm
title_full A picosecond time-resolved photoluminescence microscope with detection at wavelengths greater than 1500 nm
title_fullStr A picosecond time-resolved photoluminescence microscope with detection at wavelengths greater than 1500 nm
title_full_unstemmed A picosecond time-resolved photoluminescence microscope with detection at wavelengths greater than 1500 nm
title_short A picosecond time-resolved photoluminescence microscope with detection at wavelengths greater than 1500 nm
title_sort picosecond time resolved photoluminescence microscope with detection at wavelengths greater than 1500 nm
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AT hiskettp apicosecondtimeresolvedphotoluminescencemicroscopewithdetectionatwavelengthsgreaterthan1500nm
AT gontijoi apicosecondtimeresolvedphotoluminescencemicroscopewithdetectionatwavelengthsgreaterthan1500nm
AT purvesl apicosecondtimeresolvedphotoluminescencemicroscopewithdetectionatwavelengthsgreaterthan1500nm
AT bullerg apicosecondtimeresolvedphotoluminescencemicroscopewithdetectionatwavelengthsgreaterthan1500nm
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