Optimizing substrate surface and catalyst conditions for high yield chemical vapor deposition grown epitaxially aligned single-walled carbon nanotubes

Optimizing substrate surface and catalyst conditions for high yield chemical vapor deposition grown epitaxially aligned single-walled carbon nanotubes

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Single-crystal stable-temperature (ST)-cut quartz substrates, which have a (0 1 1 1) crystallographic plane with their surface normal lying close to 38° from the y axis ([0 1 0]), were annealed in air prior to use as a support for aligned carbon nanotube growth by chemical vapor deposition. Very smo...

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Những tác giả chính:	Ibrahim, I, Bachmatiuk, A, Börrnert, F, Wolff, U, Büchner, B, Rümmeli, M, Blüher, J, Cuniberti, G, Warner, J
Định dạng:	Journal article
Được phát hành:	2011

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