Vertical transport through n-As/p-GaSb heterojunctions at high pressures and magnetic fields
<p>The conduction band of InAs lies lower in energy than the GaSb valence band. In order to preserve continuity of the Fermi level across the interface, charge transfer takes place resulting in a confined quasi two dimensional electron gas (2DEG) in the InAs and a confined quasi two dimension...
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| Format: | Abschlussarbeit |
| Sprache: | English |
| Veröffentlicht: |
1999
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| Schlagworte: |