Carrier relaxation in GaAs v-groove quantum wires and the effects of localization
Carrier relaxation processes have been investigated in GaAs/Al xGa1-xAs v-groove quantum wires (QWRs) with a large subband separation (ΔE ≃ 46 meV). Signatures of inhibited carrier relaxation mechanisms are seen in temperature-dependent photoluminescence (PL) and photoluminescence-excitation measure...
| Principais autores: | , , , , , , , |
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| Formato: | Journal article |
| Idioma: | English |
| Publicado em: |
2004
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