Carrier relaxation in GaAs v-groove quantum wires and the effects of localization

Carrier relaxation in GaAs v-groove quantum wires and the effects of localization

Carrier relaxation processes have been investigated in GaAs/Al xGa1-xAs v-groove quantum wires (QWRs) with a large subband separation (ΔE ≃ 46 meV). Signatures of inhibited carrier relaxation mechanisms are seen in temperature-dependent photoluminescence (PL) and photoluminescence-excitation measure...

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Bibliographic Details
Main Authors:	Cade, N, Roshan, R, Hauert, M, Maciel, A, Ryan, J, Schwarz, A, Schapers, T, Luth, H
Format:	Journal article
Language:	English
Published:	2004

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