Efficient, room-temperature, near-band gap luminescence by gettering in ion implanted silicon
The production of dislocations by boron or silicon ion implantation followed by a short, high temperature anneal is found to greatly enhance near-band edge cathodoluminescence at room temperature. A strong luminescence peak at similar to 1154nm is observed. This luminescence is independent of the pr...
| Главные авторы: | , , , , , |
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| Формат: | Conference item |
| Опубликовано: |
2005
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