High carrier mobility in polycrystalline thin film diamond
Polycrystalline diamond films have been found to display p-type surface conductivity. No bulk impurity is added to the films; the p-type characteristics of the undoped diamond are thought to be due to a surface or near surface hydrogenated layer. Carrier concentrations within the range 1017-1019cm-3...
| Main Authors: | , , |
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| Format: | Journal article |
| Language: | English |
| Published: |
1998
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| Summary: | Polycrystalline diamond films have been found to display p-type surface conductivity. No bulk impurity is added to the films; the p-type characteristics of the undoped diamond are thought to be due to a surface or near surface hydrogenated layer. Carrier concentrations within the range 1017-1019cm-3 have been measured; control over the carrier concentration can be achieved by annealing the "as-grown" films in air. For a given annealing temperature a stable carrier concentration arises. The Hall carrier mobility has been explored and a value of >70cm2/Vs has been measured for a film with a carrier concentration of ∼5×1017cm-3, the highest reported for polycrystalline thin film diamond and equivalent to boron doped single crystal diamond. © 1998 American Institute of Physics. |
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