Defect mediated extraction in InAs/GaAs quantum dot solar cells
Embedding quantum dots into the intrinsic layer of a p-i-n solar cell has been proposed as a method of increasing solar cell photocurrent by improving its long-wavelength light response. However, strong carrier localization and efficient radiative recombination in quantum dots are large barriers to...
| Main Authors: | , , , , , , , |
|---|---|
| Format: | Journal article |
| Language: | English |
| Published: |
2012
|
| _version_ | 1797063040639696896 |
|---|---|
| author | Willis, S Dimmock, J Tutu, F Liu, H Peinado, MG Assender, H Watt, A Sellers, I |
| author_facet | Willis, S Dimmock, J Tutu, F Liu, H Peinado, MG Assender, H Watt, A Sellers, I |
| author_sort | Willis, S |
| collection | OXFORD |
| description | Embedding quantum dots into the intrinsic layer of a p-i-n solar cell has been proposed as a method of increasing solar cell photocurrent by improving its long-wavelength light response. However, strong carrier localization and efficient radiative recombination in quantum dots are large barriers to efficient carrier extraction. We present experimental evidence and a theoretical model to show that carrier extraction from InAs quantum dots is significantly enhanced by the presence of defects, which act to lower the potential barrier for carrier escape. Therefore in the long-wavelength region where the quantum dots are strongly absorbing we suggest that contrary to bulk systems, radiative, rather than non-radiative, processes appear to limit the performance of quantum dot solar cells. © 2012 Elsevier B.V. All rights reserved. |
| first_indexed | 2024-03-06T20:54:10Z |
| format | Journal article |
| id | oxford-uuid:389a8fbe-8862-47d6-9426-4e86e0c1c3b9 |
| institution | University of Oxford |
| language | English |
| last_indexed | 2024-03-06T20:54:10Z |
| publishDate | 2012 |
| record_format | dspace |
| spelling | oxford-uuid:389a8fbe-8862-47d6-9426-4e86e0c1c3b92022-03-26T13:51:10ZDefect mediated extraction in InAs/GaAs quantum dot solar cellsJournal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:389a8fbe-8862-47d6-9426-4e86e0c1c3b9EnglishSymplectic Elements at Oxford2012Willis, SDimmock, JTutu, FLiu, HPeinado, MGAssender, HWatt, ASellers, IEmbedding quantum dots into the intrinsic layer of a p-i-n solar cell has been proposed as a method of increasing solar cell photocurrent by improving its long-wavelength light response. However, strong carrier localization and efficient radiative recombination in quantum dots are large barriers to efficient carrier extraction. We present experimental evidence and a theoretical model to show that carrier extraction from InAs quantum dots is significantly enhanced by the presence of defects, which act to lower the potential barrier for carrier escape. Therefore in the long-wavelength region where the quantum dots are strongly absorbing we suggest that contrary to bulk systems, radiative, rather than non-radiative, processes appear to limit the performance of quantum dot solar cells. © 2012 Elsevier B.V. All rights reserved. |
| spellingShingle | Willis, S Dimmock, J Tutu, F Liu, H Peinado, MG Assender, H Watt, A Sellers, I Defect mediated extraction in InAs/GaAs quantum dot solar cells |
| title | Defect mediated extraction in InAs/GaAs quantum dot solar cells |
| title_full | Defect mediated extraction in InAs/GaAs quantum dot solar cells |
| title_fullStr | Defect mediated extraction in InAs/GaAs quantum dot solar cells |
| title_full_unstemmed | Defect mediated extraction in InAs/GaAs quantum dot solar cells |
| title_short | Defect mediated extraction in InAs/GaAs quantum dot solar cells |
| title_sort | defect mediated extraction in inas gaas quantum dot solar cells |
| work_keys_str_mv | AT williss defectmediatedextractionininasgaasquantumdotsolarcells AT dimmockj defectmediatedextractionininasgaasquantumdotsolarcells AT tutuf defectmediatedextractionininasgaasquantumdotsolarcells AT liuh defectmediatedextractionininasgaasquantumdotsolarcells AT peinadomg defectmediatedextractionininasgaasquantumdotsolarcells AT assenderh defectmediatedextractionininasgaasquantumdotsolarcells AT watta defectmediatedextractionininasgaasquantumdotsolarcells AT sellersi defectmediatedextractionininasgaasquantumdotsolarcells |