Defect mediated extraction in InAs/GaAs quantum dot solar cells

Embedding quantum dots into the intrinsic layer of a p-i-n solar cell has been proposed as a method of increasing solar cell photocurrent by improving its long-wavelength light response. However, strong carrier localization and efficient radiative recombination in quantum dots are large barriers to...

Full description

Bibliographic Details
Main Authors: Willis, S, Dimmock, J, Tutu, F, Liu, H, Peinado, MG, Assender, H, Watt, A, Sellers, I
Format: Journal article
Language:English
Published: 2012