Defect mediated extraction in InAs/GaAs quantum dot solar cells

Embedding quantum dots into the intrinsic layer of a p-i-n solar cell has been proposed as a method of increasing solar cell photocurrent by improving its long-wavelength light response. However, strong carrier localization and efficient radiative recombination in quantum dots are large barriers to...

詳細記述

書誌詳細
主要な著者:	Willis, S, Dimmock, J, Tutu, F, Liu, H, Peinado, MG, Assender, H, Watt, A, Sellers, I
フォーマット:	Journal article
言語:	English
出版事項:	2012

Defect mediated extraction in InAs/GaAs quantum dot solar cells 著者: Willis, S, Dimmock, J, Tutu, F, Liu, H, Peinado, MG, Assender, H, Watt, A, Sellers, I

出版事項 2012

Journal article

Defect mediated extraction in InAs/GaAs quantum dot solar cells

Defect mediated extraction in InAs/GaAs quantum dot solar cells 著者: Willis, S, Dimmock, J, Tutu, F, Liu, H, Peinado, MG, Assender, H, Watt, A, Sellers, I

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