Defect mediated extraction in InAs/GaAs quantum dot solar cells
Embedding quantum dots into the intrinsic layer of a p-i-n solar cell has been proposed as a method of increasing solar cell photocurrent by improving its long-wavelength light response. However, strong carrier localization and efficient radiative recombination in quantum dots are large barriers to...
| Үндсэн зохиолчид: | , , , , , , , |
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| Формат: | Journal article |
| Хэл сонгох: | English |
| Хэвлэсэн: |
2012
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