Optoelectronic properties of GaAs nanowire photodetector
A single GaAs nanowire (NW) photodetector (PD) is fabricated based on the back-to-back Schottky diode structure. Optoelectronic properties are characterized by measuring device photocurrent, and also the spectral response, which indicates our device is very sensitive and applicable as a PD. © 2012 I...
Полное описание
Библиографические подробности
| Главные авторы: |
Wang, H,
Parkinson, P,
Tian, J,
Saxena, D,
Mokkapati, S,
Gao, Q,
Prasai, P,
Fu, L,
Karouta, F,
Tan, H,
Jagadish, C |
|---|
| Формат: | Conference item
|
|---|
| Опубликовано: |
2012
|
|---|