Optoelectronic properties of GaAs nanowire photodetector
A single GaAs nanowire (NW) photodetector (PD) is fabricated based on the back-to-back Schottky diode structure. Optoelectronic properties are characterized by measuring device photocurrent, and also the spectral response, which indicates our device is very sensitive and applicable as a PD. © 2012 I...
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| Format: | Conference item |
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2012
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| _version_ | 1826267456799244288 |
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| author | Wang, H Parkinson, P Tian, J Saxena, D Mokkapati, S Gao, Q Prasai, P Fu, L Karouta, F Tan, H Jagadish, C |
| author_facet | Wang, H Parkinson, P Tian, J Saxena, D Mokkapati, S Gao, Q Prasai, P Fu, L Karouta, F Tan, H Jagadish, C |
| author_sort | Wang, H |
| collection | OXFORD |
| description | A single GaAs nanowire (NW) photodetector (PD) is fabricated based on the back-to-back Schottky diode structure. Optoelectronic properties are characterized by measuring device photocurrent, and also the spectral response, which indicates our device is very sensitive and applicable as a PD. © 2012 IEEE. |
| first_indexed | 2024-03-06T20:54:30Z |
| format | Conference item |
| id | oxford-uuid:38ba7159-1b75-4f6e-b0a5-9b71252ee83e |
| institution | University of Oxford |
| last_indexed | 2024-03-06T20:54:30Z |
| publishDate | 2012 |
| record_format | dspace |
| spelling | oxford-uuid:38ba7159-1b75-4f6e-b0a5-9b71252ee83e2022-03-26T13:51:49ZOptoelectronic properties of GaAs nanowire photodetectorConference itemhttp://purl.org/coar/resource_type/c_5794uuid:38ba7159-1b75-4f6e-b0a5-9b71252ee83eSymplectic Elements at Oxford2012Wang, HParkinson, PTian, JSaxena, DMokkapati, SGao, QPrasai, PFu, LKarouta, FTan, HJagadish, CA single GaAs nanowire (NW) photodetector (PD) is fabricated based on the back-to-back Schottky diode structure. Optoelectronic properties are characterized by measuring device photocurrent, and also the spectral response, which indicates our device is very sensitive and applicable as a PD. © 2012 IEEE. |
| spellingShingle | Wang, H Parkinson, P Tian, J Saxena, D Mokkapati, S Gao, Q Prasai, P Fu, L Karouta, F Tan, H Jagadish, C Optoelectronic properties of GaAs nanowire photodetector |
| title | Optoelectronic properties of GaAs nanowire photodetector |
| title_full | Optoelectronic properties of GaAs nanowire photodetector |
| title_fullStr | Optoelectronic properties of GaAs nanowire photodetector |
| title_full_unstemmed | Optoelectronic properties of GaAs nanowire photodetector |
| title_short | Optoelectronic properties of GaAs nanowire photodetector |
| title_sort | optoelectronic properties of gaas nanowire photodetector |
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