Optoelectronic properties of GaAs nanowire photodetector
A single GaAs nanowire (NW) photodetector (PD) is fabricated based on the back-to-back Schottky diode structure. Optoelectronic properties are characterized by measuring device photocurrent, and also the spectral response, which indicates our device is very sensitive and applicable as a PD. © 2012 I...
| Main Authors: | , , , , , , , , , , |
|---|---|
| 格式: | Conference item |
| 出版: |
2012
|