Optoelectronic properties of GaAs nanowire photodetector

Optoelectronic properties of GaAs nanowire photodetector

A single GaAs nanowire (NW) photodetector (PD) is fabricated based on the back-to-back Schottky diode structure. Optoelectronic properties are characterized by measuring device photocurrent, and also the spectral response, which indicates our device is very sensitive and applicable as a PD. © 2012 I...

Полное описание

Библиографические подробности
Главные авторы:	Wang, H, Parkinson, P, Tian, J, Saxena, D, Mokkapati, S, Gao, Q, Prasai, P, Fu, L, Karouta, F, Tan, H, Jagadish, C
Формат:	Conference item
Опубликовано:	2012

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