Optoelectronic properties of GaAs nanowire photodetector

Optoelectronic properties of GaAs nanowire photodetector

A single GaAs nanowire (NW) photodetector (PD) is fabricated based on the back-to-back Schottky diode structure. Optoelectronic properties are characterized by measuring device photocurrent, and also the spectral response, which indicates our device is very sensitive and applicable as a PD. © 2012 I...

Bibliografski detalji
Glavni autori:	Wang, H, Parkinson, P, Tian, J, Saxena, D, Mokkapati, S, Gao, Q, Prasai, P, Fu, L, Karouta, F, Tan, H, Jagadish, C
Format:	Conference item
Izdano:	2012

Slični predmeti

Optically pumped room-temperature GaAs nanowire lasers
od: Saxena, D, i dr.
Izdano: (2013)

Tailoring GaAs, InAs, and InGaAs nanowires for optoelectronic device applications
od: Joyce, H, i dr.
Izdano: (2011)

Tailoring GaAs, InAs, and InGaAs Nanowires for Optoelectronic Device Applications
od: Joyce, H, i dr.
Izdano: (2011)

III-V semiconductor nanowires for optoelectronic device applications
od: Mokkapati, S, i dr.
Izdano: (2013)

Growth, structural and optical properties of high quality gaAs nanowires for optoelectronics
od: Joyce, H, i dr.
Izdano: (2008)

Picosecond carrier lifetime measurements on a single GaAs Nanowire
od: Parkinson, P, i dr.
Izdano: (2012)

Transient terahertz conductivity of GaAs nanowires
od: Parkinson, P, i dr.
Izdano: (2007)

III-V nanowires for optoelectronic applications
od: Tan, H, i dr.
Izdano: (2013)

Growth, structural and optical properties of GaAs, InGaAs and AlGaAs nanowires and nanowire heterostruetures
od: Joyce, H, i dr.
Izdano: (2007)

III-V nanowires for optoelectronic applications
od: Tan, H, i dr.
Izdano: (2012)

High performance GaAs/AlGaAs radial heterostructure nanowires grown by MOCVD
od: Jiang, N, i dr.
Izdano: (2013)

Enhanced minority carrier lifetimes in GaAs/AlGaAs core-shell nanowires through shell growth optimization.
od: Jiang, N, i dr.
Izdano: (2013)

Droplet epitaxy of strain-free GaAs/AlGaAs quantum molecules for optoelectronic applications
od: Lei, W, i dr.
Izdano: (2012)

Self-healing of fractured GaAs nanowires.
od: Wang, Y, i dr.
Izdano: (2011)

Nature of heterointerfaces in GaAs/InAs and InAs/GaAs axial nanowire heterostructures
od: Paladugu, M, i dr.
Izdano: (2008)

Super deformability and Young's modulus of GaAs nanowires.
od: Wang, Y, i dr.
Izdano: (2011)

Quantum dots and nanowires for optoelectronic device applications
od: Gao, Q, i dr.
Izdano: (2006)

Growth mechanism of truncated triangular GaAs nanowires
od: Zou, J, i dr.
Izdano: (2006)

Growth and characterization of GaAs1and#x2212;xSbx nanowires
od: Yuan, X, i dr.
Izdano: (2012)

Improved GaAs nanowire solar cells using AlGaAs for surface passivation
od: Lee, Y, i dr.
Izdano: (2012)

Improvement of minority carrier lifetime in GaAs/AlxGa 1-xAs core-shell nanowires
od: Jiang, N, i dr.
Izdano: (2012)

Novel growth and properties of GaAs nanowires on Si substrates.
od: Kang, J, i dr.
Izdano: (2010)

Electron mobilities approaching bulk limits in "surface-free" GaAs nanowires.
od: Joyce, H, i dr.
Izdano: (2014)

Understanding the true shape of Au-catalyzed GaAs nanowires.
od: Jiang, N, i dr.
Izdano: (2014)

Optical properties of single InP and GaAs nanowire heterostructures
od: Jackson, H, i dr.
Izdano: (2008)

Understanding the kink formation in GaAs/InAs heterostructural nanowires
od: Paladugu, M, i dr.
Izdano: (2006)

Growth of straight InAs-on-GaAs nanowire heterostructures
od: Messing, M, i dr.
Izdano: (2011)

Long minority carrier lifetime in Au-catalyzed GaAs/AlxGa1-xAs core-shell nanowires
od: Jiang, N, i dr.
Izdano: (2012)

Vertically standing Ge nanowires on GaAs(110) substrates
od: Song, MS, i dr.
Izdano: (2008)

Evolution of epitaxial InAs nanowires on GaAs 111B.
od: Zhang, X, i dr.
Izdano: (2009)

Formation of hierarchical InAs nanoring/GaAs nanowire heterostructures.
od: Paladugu, M, i dr.
Izdano: (2009)

Electronic properties of GaAs, InAs and InP nanowires studied by terahertz spectroscopy.
od: Joyce, H, i dr.
Izdano: (2013)

Optimised two-temperature growth of GaAs nanowire s by metalorganic chemical vapour deposition
od: Joyce, H, i dr.
Izdano: (2006)

Polarity driven formation of InAs/GaAs hierarchical nanowire heterostructures
od: Paladugu, M, i dr.
Izdano: (2008)

Improvement of morphology, structure, and optical properties of GaAs nanowires grown on Si substrates
od: Kang, J, i dr.
Izdano: (2010)

Precursor flow rate manipulation for the controlled fabrication of twin-free GaAs nanowires on silicon substrates.
od: Kang, J, i dr.
Izdano: (2012)

The influence of surfaces on the transient terahertz conductivity and electron mobility of GaAs nanowires
od: Joyce, H, i dr.
Izdano: (2017)

Defect-Free GaAs/AlGaAs Core-Shell Nanowires on Si Substrates
od: Kang, J, i dr.
Izdano: (2011)

Strong carrier lifetime enhancement in GaAs nanowires coated with semiconducting polymer.
od: Yong, C, i dr.
Izdano: (2012)

Novel growth phenomena observed in axial InAs/GaAs nanowire heterostructures.
od: Paladugu, M, i dr.
Izdano: (2007)