On the kinetics of high intensity illuminated annealing of n-type SHJ solar cells: 0.4%abs efficiency gain in one second
Silicon heterojunction (SHJ) solar cells are at the forefront of high efficiency industrial solar cell manufacturing. The rapid increase in efficiency compared with passivated emitter and rear cell (PERC) cells has significantly propelled commercial interest in this technology. Illuminated annealing...
| Main Authors: | , , , , , , , , , , |
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| Format: | Journal article |
| Language: | English |
| Published: |
Elsevier
2022
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| _version_ | 1797110826580049920 |
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| author | Wright, M Soeriyadi, AH Kim, M Wright, B Stefani, BV Andronikov, D Nyapshaev, I Abolmasov, S Abramov, A Bonilla, RS Hallam, B |
| author_facet | Wright, M Soeriyadi, AH Kim, M Wright, B Stefani, BV Andronikov, D Nyapshaev, I Abolmasov, S Abramov, A Bonilla, RS Hallam, B |
| author_sort | Wright, M |
| collection | OXFORD |
| description | Silicon heterojunction (SHJ) solar cells are at the forefront of high efficiency industrial solar cell manufacturing. The rapid increase in efficiency compared with passivated emitter and rear cell (PERC) cells has significantly propelled commercial interest in this technology. Illuminated annealing under elevated temperatures has been shown to lead to efficiency enhancements in SHJ cells. Recently, it was observed that increasing the light intensity used during the annealing can accelerate the efficiency gains, this approach has started to be incorporated into SHJ manufacturing. In this work, we investigate the kinetics of this high intensity illuminated annealing process in the temperature range from 200 °C to 300 °C, demonstrating that the kinetics and extent of the efficiency gain strongly depend on the temperature of the process. For the first time, we show that the changes in VOC and RS, which control the efficiency enhancement, occur at different rates. Remarkably, by investigating the temperature dependence we demonstrate a process that leads to efficiency gains of >0.4%abs in only 1 s. This new understanding presents a pathway to an industrially compatible annealing approach that significantly increases the power output of SHJ modules. |
| first_indexed | 2024-03-07T08:00:11Z |
| format | Journal article |
| id | oxford-uuid:390d4a84-f111-45e2-b67c-6631a3a52e11 |
| institution | University of Oxford |
| language | English |
| last_indexed | 2024-03-07T08:00:11Z |
| publishDate | 2022 |
| publisher | Elsevier |
| record_format | dspace |
| spelling | oxford-uuid:390d4a84-f111-45e2-b67c-6631a3a52e112023-09-25T16:35:17ZOn the kinetics of high intensity illuminated annealing of n-type SHJ solar cells: 0.4%abs efficiency gain in one secondJournal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:390d4a84-f111-45e2-b67c-6631a3a52e11EnglishSymplectic ElementsElsevier2022Wright, MSoeriyadi, AHKim, MWright, BStefani, BVAndronikov, DNyapshaev, IAbolmasov, SAbramov, ABonilla, RSHallam, BSilicon heterojunction (SHJ) solar cells are at the forefront of high efficiency industrial solar cell manufacturing. The rapid increase in efficiency compared with passivated emitter and rear cell (PERC) cells has significantly propelled commercial interest in this technology. Illuminated annealing under elevated temperatures has been shown to lead to efficiency enhancements in SHJ cells. Recently, it was observed that increasing the light intensity used during the annealing can accelerate the efficiency gains, this approach has started to be incorporated into SHJ manufacturing. In this work, we investigate the kinetics of this high intensity illuminated annealing process in the temperature range from 200 °C to 300 °C, demonstrating that the kinetics and extent of the efficiency gain strongly depend on the temperature of the process. For the first time, we show that the changes in VOC and RS, which control the efficiency enhancement, occur at different rates. Remarkably, by investigating the temperature dependence we demonstrate a process that leads to efficiency gains of >0.4%abs in only 1 s. This new understanding presents a pathway to an industrially compatible annealing approach that significantly increases the power output of SHJ modules. |
| spellingShingle | Wright, M Soeriyadi, AH Kim, M Wright, B Stefani, BV Andronikov, D Nyapshaev, I Abolmasov, S Abramov, A Bonilla, RS Hallam, B On the kinetics of high intensity illuminated annealing of n-type SHJ solar cells: 0.4%abs efficiency gain in one second |
| title | On the kinetics of high intensity illuminated annealing of n-type SHJ solar cells: 0.4%abs efficiency gain in one second |
| title_full | On the kinetics of high intensity illuminated annealing of n-type SHJ solar cells: 0.4%abs efficiency gain in one second |
| title_fullStr | On the kinetics of high intensity illuminated annealing of n-type SHJ solar cells: 0.4%abs efficiency gain in one second |
| title_full_unstemmed | On the kinetics of high intensity illuminated annealing of n-type SHJ solar cells: 0.4%abs efficiency gain in one second |
| title_short | On the kinetics of high intensity illuminated annealing of n-type SHJ solar cells: 0.4%abs efficiency gain in one second |
| title_sort | on the kinetics of high intensity illuminated annealing of n type shj solar cells 0 4 abs efficiency gain in one second |
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