THE EXPERIMENTAL REQUIREMENTS FOR QUANTITATIVE MEASUREMENT OF CARRIER RECOMBINATION AT DEFECTS IN SEMICONDUCTORS USING THE EBIC TECHNIQUE

THE EXPERIMENTAL REQUIREMENTS FOR QUANTITATIVE MEASUREMENT OF CARRIER RECOMBINATION AT DEFECTS IN SEMICONDUCTORS USING THE EBIC TECHNIQUE

An analysis is made of the experimental parameters which can cause errors when EBIC measurements are used to investigate the recombination behaviour of defects. In the first part of the paper specimen effects such as the minority carrier diffusion length and depletion region width are considered. In...

Πλήρης περιγραφή

Λεπτομέρειες βιβλιογραφικής εγγραφής
Κύριος συγγραφέας:	Wilshaw, P
Μορφή:	Journal article
Γλώσσα:	English
Έκδοση:	1989

Παρόμοια τεκμήρια

EBIC CONTRAST OF DEFECTS IN SEMICONDUCTORS
ανά: Wilshaw, P, κ.ά.
Έκδοση: (1991)

A comparison between the use of EBIC and IBIC microscopy for semiconductor defect analysis
ανά: Breese, M, κ.ά.
Έκδοση: (1998)

QUANTITATIVE EBIC INVESTIGATIONS OF DEFORMATION-INDUCED AND COPPER DECORATED DISLOCATIONS IN SILICON
ανά: Fell, T, κ.ά.
Έκδοση: (1991)

QUANTITATIVE EBIC INVESTIGATIONS OF DEFORMATION-INDUCED AND COPPER DECORATED DISLOCATIONS IN SILICON
ανά: Fell, T, κ.ά.
Έκδοση: (1991)

DISLOCATION RECOMBINATION THEORY FOR SILICON AND INTERPRETATION OF EBIC CONTRAST IN TERMS OF FUNDAMENTAL DISLOCATION PARAMETERS.
ανά: Wilshaw, P, κ.ά.
Έκδοση: (1986)

MEASUREMENT OF CONTRAST FROM INDIVIDUAL DISLOCATIONS BY LOCK-IN EBIC
ανά: Ourmazd, A, κ.ά.
Έκδοση: (1982)

An SEM EBIC study of the electronic properties of dislocations in silicon
ανά: Wilshaw, P, κ.ά.
Έκδοση: (1984)

EBIC INVESTIGATIONS OF DISLOCATIONS AND THEIR INTERACTIONS WITH IMPURITIES IN SILICON
ανά: Fell, T, κ.ά.
Έκδοση: (1993)

Junction depth & defect characterization with the use of EBIC
ανά: Phua, Poh Chin.
Έκδοση: (2008)

SOME ASPECTS OF THE MEASUREMENTS OF ELECTRICAL EFFECTS OF DISLOCATIONS IN SILICON USING A COMPUTERIZED EBIC SYSTEM
ανά: Wilshaw, P, κ.ά.
Έκδοση: (1983)

SOME ASPECTS OF THE MEASUREMENTS OF ELECTRICAL EFFECTS OF DISLOCATION IN SILICON USING A COMPUTERISED EBIC SYSTEM.
ανά: Wilshaw, P, κ.ά.
Έκδοση: (1983)

THEORETICAL INVESTIGATIONS OF COMBINED CL AND EBIC MEASUREMENTS ON CRYSTAL DEFECTS
ανά: Hildebrandt, S, κ.ά.
Έκδοση: (1989)

AN EBIC INVESTIGATION OF ALPHA, BETA AND SCREW DISLOCATIONS IN GALLIUM-ARSENIDE
ανά: Galloway, S, κ.ά.
Έκδοση: (1993)

ON THE FORMATION OF BRIGHT EBIC CONTRASTS AT CRYSTAL DEFECTS
ανά: Blumtritt, H, κ.ά.
Έκδοση: (1989)

TEMPERATURE DEPENDENCE OF EBIC CONTRAST FROM INDIVIDUAL DISLOCATIONS IN SILICON.
ανά: Ourmazd, A, κ.ά.
Έκδοση: (1983)

THE TEMPERATURE-DEPENDENCE OF EBIC CONTRAST FROM INDIVIDUAL DISLOCATIONS IN SILICON
ανά: Ourmazd, A, κ.ά.
Έκδοση: (1983)

COMBINED APPLICATION OF SEM-CL AND SEM-EBIC FOR THE INVESTIGATION OF COMPOUND SEMICONDUCTORS
ανά: Schreiber, J, κ.ά.
Έκδοση: (1989)

NEW RESULTS AND AN INTERPRETATION FOR SEM EBIC CONTRAST ARISING FROM INDIVIDUAL DISLOCATIONS IN SILICON.
ανά: Wilshaw, P, κ.ά.
Έκδοση: (1985)

Carrier recombination at defects in silicon: The effect of transition metals and hydrogen passivation
ανά: Wilshaw, P, κ.ά.
Έκδοση: (1997)

Device parameters characterization with the use of EBIC
ανά: Oka Kurniawan
Έκδοση: (2010)

Understanding and optimising EBIC pn-junction characterisation from modelling insights
ανά: Zhou, R, κ.ά.
Έκδοση: (2020)

Verification of selected electron beam induced current (EBIC) techniques
ανά: Ang, Alex Yong Guan
Έκδοση: (2008)

Extraction of diffusion length using junction-less EBIC
ανά: Ong, Vincent K. S., κ.ά.
Έκδοση: (2010)

IMAGING OF SEMICONDUCTOR DEFECTS USING ION CHANNELING
ανά: King, P, κ.ά.
Έκδοση: (1993)

Simulation, modeling and parameter extraction studies in EBIC mode of SEM
ανά: Tan, Chee Chin
Έκδοση: (2014)

Depth-dependent EBIC microscopy of radial-junction Si micropillar arrays
ανά: Kaden M. Powell, κ.ά.
Έκδοση: (2020-09-01)

Charge‐carrier trapping and radiative recombination in metal halide perovskite semiconductors
ανά: Trimpl, MJ, κ.ά.
Έκδοση: (2020)

Determination of diffusion length from within a confined region with the use of EBIC
ανά: Ong, Vincent K. S., κ.ά.
Έκδοση: (2009)

A direct evidence of fatigue damage growth inside silicon MEMS structures obtained with EBIC technique
ανά: Vu Le Huy, κ.ά.
Έκδοση: (2014-06-01)

Simulating the electron beam induced current (EBIC) effect in a computer
ανά: Lim, Wei lun
Έκδοση: (2012)

Data for Understanding and Optimising EBIC pn-Junction Characterisation from Modelling Insights
ανά: Bonilla, R
Έκδοση: (2020)

Feature Selection in High-Dimensional Models via EBIC with Energy Distance Correlation
ανά: Isaac Xoese Ocloo, κ.ά.
Έκδοση: (2022-12-01)

Recombination statistics of non-equilibrium carriers in the model of semiconductor with donor-acceptor pairs possessing variable recombination activity
ανά: A.Yu. Leyderman, κ.ά.
Έκδοση: (2020-09-01)

Quantitative characterization of topographic defects of semiconductor silicon wafers
ανά: S. F. Sianko, κ.ά.
Έκδοση: (2019-06-01)

EBIC studies of minority electron diffusion length in undoped p-type gallium oxide
ανά: Leonid Chernyak, κ.ά.
Έκδοση: (2024-11-01)

EBIC Imaging of Conductive Paths Formed in Graphene Oxide as a Result of Resistive Switching
ανά: Eugene B. Yakimov, κ.ά.
Έκδοση: (2023-02-01)

Determination of diffusion lengths with the use of EBIC from a diffused junction with any values of junction depths
ανά: Ong, Vincent K. S., κ.ά.
Έκδοση: (2009)

Lifetime in semiconductors : an apparatus for the measurement of carrier liftmen in silicon /
ανά: 269176 Rose, F. W. G., κ.ά.

METHOD OF MEASURING NON-EQUILIBRIUM CARRIERS CONCENTRATION AND THEIR LIFETIME IN A SEMICONDUCTOR USING THE APPROACH OF A PHOTONIC CRYSTAL WITH A DEFECT MODE
ανά: B. V. Chernyshov, κ.ά.
Έκδοση: (2017-12-01)

Nonradiative recombination in semiconductors /
ανά: 425924 Abakumov, V. N., κ.ά.
Έκδοση: (1991)