THE EXPERIMENTAL REQUIREMENTS FOR QUANTITATIVE MEASUREMENT OF CARRIER RECOMBINATION AT DEFECTS IN SEMICONDUCTORS USING THE EBIC TECHNIQUE
An analysis is made of the experimental parameters which can cause errors when EBIC measurements are used to investigate the recombination behaviour of defects. In the first part of the paper specimen effects such as the minority carrier diffusion length and depletion region width are considered. In...
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| פורמט: | Journal article |
| שפה: | English |
| יצא לאור: |
1989
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