Competition between initial- and final-state effects in valence- and core-level x-ray photoemission of Sb-doped SnO2
High resolution valence- and core-level photoemission spectra of undoped and 3% Sb-doped SnO2 are presented. Conduction-band occupation due to Sb doping in SnO2 leads to a shift of valence-band features to high binding energy. However, the shift is less than the width of the occupied part of the con...
| Main Authors: | , , , |
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| 格式: | Journal article |
| 语言: | English |
| 出版: |
1999
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| 总结: | High resolution valence- and core-level photoemission spectra of undoped and 3% Sb-doped SnO2 are presented. Conduction-band occupation due to Sb doping in SnO2 leads to a shift of valence-band features to high binding energy. However, the shift is less than the width of the occupied part of the conduction band. This is attributed to a shrinkage of the bulk band gap with doping, arising from an attractive dopant electron interaction and screening of the Coulomb repulsion between valence and conduction electrons. Core-level spectra provide evidence for strong screening by the conduction electron gas in 3% Sb-doped SnO2, giving rise to "screened" and "unscreened" final-state peaks in photoemission. The dominant screening response involves excitation of conduction electron plasmons. ©1999 The American Physical Society. |
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