The segregation behaviour of oxygen at dislocations in silicon
The interaction between dislocations and oxygen atoms in silicon has been studied. The effect of immobilization of dislocations by the segregation of oxygen to the dislocation core (dislocation locking) has been investigated in the temperature range 400-800 °C and for different oxygen concentrations...
| Main Authors: | , , , |
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| Format: | Journal article |
| Language: | English |
| Published: |
Scitec Publications Ltd.
1999
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