GaAs high temperature optical constants and application to optical monitoring within the MOVPE environment
The real and imaginary components of the GaAs refractive index at temperatures between 20-700 degrees C have been obtained. Measurements were made by comparing the variable angle reflectivity of p-polarized and s-polarized 633 nm wavelength light from a deoxidized GaAs surface. By using these temper...
Huvudupphovsmän: | Allwood, D, Klipstein, P, Mason, N, Nicholas, R, Walker, P |
---|---|
Materialtyp: | Conference item |
Publicerad: |
Minerals, Metals and Materials Soc (TMS)
2000
|
Liknande verk
Liknande verk
-
Advanced AlGaAs/GaAs Heterostructures Grown by MOVPE
av: Maxim A. Ladugin, et al.
Publicerad: (2019-06-01) -
PHOTOLUMINESCENCE AT HIGH-PRESSURES FROM HIGHLY STRAINED MOVPE GROWN GAAS/GASB/GAAS HETEROSTRUCTURES
av: Warburton, R, et al.
Publicerad: (1991) -
Growth parameters of InAs/GaAs quantum dots grown by MOVPE
av: Roslan, Sharizar, et al.
Publicerad: (2006) -
Growth parameters of InAs/GaAs quantum dots grown by MOVPE /
av: Zulkafli Othaman, author, et al.
Publicerad: (2007) -
Arsenic Diffusion in MOVPE‐Grown GaAs/Ge Epitaxial Structures
av: V. Orejuela, et al.
Publicerad: (2024-09-01)