EXCITATION-ENHANCED DISLOCATION MOBILITY IN SEMICONDUCTORS - A MICROSCOPIC MECHANISM

EXCITATION-ENHANCED DISLOCATION MOBILITY IN SEMICONDUCTORS - A MICROSCOPIC MECHANISM

Dades bibliogràfiques
Autors principals:	Maeda, N, Takeuchi, S
Format:	Conference item
Publicat:	1989

Ítems similars

EFFECT OF SURFACE-CHARGE ON THE DISLOCATION MOBILITY IN SEMICONDUCTORS
per: Czernuszka, J
Publicat: (1989)

EFFECT OF SURFACE-CHARGE ON THE DISLOCATION MOBILITY IN SEMICONDUCTORS
per: Czernuszka, J
Publicat: (1989)

Atomistic simulation of structure and mobility of dislocation in semiconductor
per: Choo, Zhi Min.
Publicat: (2008)

Dislocations in semiconductors
per: Bigger, J
Publicat: (1992)

DISLOCATION MECHANISMS FOR TWINNING AND POLYTYPIC TRANSFORMATIONS IN SEMICONDUCTORS
per: Pirouz, P
Publicat: (1989)

DISLOCATION GEOMETRIES IN SEMICONDUCTORS AND IN SEMICONDUCTOR HETEROSTRUCTURES
per: Cockayne, D, et al.
Publicat: (1991)

MECHANICAL-PROPERTIES AND DISLOCATION DYNAMICS OF COMPOUND AND ALLOY SEMICONDUCTORS
per: Yonenaga, I, et al.
Publicat: (1989)

CAPACITANCE TRANSIENT SPECTROSCOPY OF DISLOCATIONS IN SEMICONDUCTORS
per: Schroter, W, et al.
Publicat: (1989)

LINESHAPE OF COMBINED RESONANCE ON DISLOCATIONS IN SEMICONDUCTORS
per: Koshelev, A, et al.
Publicat: (1989)

A study of dislocations in lattice-mismatched semiconductors
per: Yu, Ying
Publicat: (2011)

Contrast-enhanced fluorescence microscope by LED integrated excitation cubes
per: Yuanhua Liu, et al.
Publicat: (2023-02-01)

PARTIAL SEPARATIONS OF EXTENDED ALPHA-DISLOCATIONS AND BETA-DISLOCATIONS IN II-VI SEMICONDUCTORS
per: Lu, G, et al.
Publicat: (1986)

STRUCTURE AND PROPERTIES OF DISLOCATIONS IN SEMICONDUCTORS 1989 - PREFACE
per: Hirsch, P, et al.
Publicat: (1989)

STRUCTURE AND PROPERTIES OF DISLOCATIONS IN SEMICONDUCTORS 1989 - PREFACE
per: Hirsch, P, et al.
Publicat: (1989)

IMPURITY EFFECTS ON DYNAMIC BEHAVIOR OF DISLOCATIONS IN SEMICONDUCTORS
per: Sumino, K
Publicat: (1989)

DISLOCATION-STRUCTURES AND MOTION IN II-VI SEMICONDUCTORS
per: Lu, G, et al.
Publicat: (1983)

Intense terahertz excitation of semiconductors /
per: 193593 Ganichev, S. D., et al.
Publicat: (2006)

Localized nonlinear waves in a semiconductor with charged dislocations
per: Erofeev Vladimir I., et al.
Publicat: (2021-01-01)

Methods of dislocation structure characterization in AIIIBV semiconductor single crystals
per: Stanislav N. Knyazev, et al.
Publicat: (2022-12-01)

Microscopic Study on Excitation and Emission Enhancement by the Plasmon Mode on a Plasmonic Chip
per: Hinako Chida, et al.
Publicat: (2020-11-01)

IMAGING OF DISLOCATIONS USING BACKSCATTERED ELECTRONS IN A SCANNING ELECTRON-MICROSCOPE
per: Czernuszka, J, et al.
Publicat: (1990)

DISLOCATIONS IN SEMICONDUCTORS AS STUDIED BY WEAK-BEAM ELECTRON-MICROSCOPY
per: Cockayne, D, et al.
Publicat: (1979)

Super-diffusion of excited carriers in semiconductors
per: Ebrahim Najafi, et al.
Publicat: (2017-05-01)

Atomistics of dislocation mobility in silicon : core structure and mechanisms
per: Justo Filho, João F
Publicat: (2009)

ELECTRICAL AND OPTICAL PHENOMENA OF II-VI SEMICONDUCTORS ASSOCIATED WITH DISLOCATIONS
per: Ossipyan, Y
Publicat: (1989)

Weak discontinuity waves in n-type semiconductors with defects of dislocation
per: Maria Paola Mazzeo, et al.
Publicat: (2019-12-01)

Microscopic theory of semiconductors : quantum kinetics, confinement and laser /
per: Koch, Stephan W.
Publicat: (1995)

Thermal-Optical Mechanical Waves of the Excited Microelongated Semiconductor Layer in a Rotational Field
per: Abdulkafi M. Saeed, et al.
Publicat: (2022-12-01)

Photoluminescence and photoluminescence excitation study of semiconductor materials
per: Ngian, Jin Shun.
Publicat: (2009)

Mechanisms of mobile bearing dislocation in lateral unicompartmental knee replacement
per: Yang, I, et al.
Publicat: (2023)

Microscopic origin of molecule excitation via inelastic electron scattering in scanning tunneling microscope
per: Guohui Dong, et al.
Publicat: (2020-01-01)

Magnetic Field Influence of Photo-Mechanical-Thermal Waves for Optically Excited Microelongated Semiconductor
per: Abdulkafi M. Saeed, et al.
Publicat: (2022-12-01)

MOBILITY OF DISLOCATIONS IN GALLIUM-ARSENIDE
per: Alexander, H, et al.
Publicat: (1989)

HIGH SPATIAL-RESOLUTION CATHODOLUMINESCENCE FROM DISLOCATIONS IN SEMICONDUCTORS STUDIES IN A TEM
per: Steeds, J
Publicat: (1989)

Density-dependent phonoriton states in highly excited semiconductors /
per: 333447 Quang, Nguyen Hong, et al.
Publicat: (1995)

Nonlinear Charge Transport and Excitable Phenomena in Semiconductor Superlattices
per: Luis L. Bonilla, et al.
Publicat: (2024-08-01)

Microscope ⁃ assisted transoral ⁃transpharyngeal reduction and fixation of basilar invagination and atlantoaxial dislocation
per: Wei⁃jie ZHU, et al.
Publicat: (2012-08-01)

Mobility enhancement in heavily doped semiconductors via electron cloaking
per: Zhou, Jiawei, et al.
Publicat: (2023)

Mobility enhancement in heavily doped semiconductors via electron cloaking
per: Jiawei Zhou, et al.
Publicat: (2022-05-01)

Interplay between the Edge Dislocation and Hydrogen in Tungsten at Electronically Excited States
per: Jiong‐Rong Wang, et al.
Publicat: (2023-08-01)