Theory of electron-plasmon coupling in semiconductors
The ability to manipulate plasmons is driving new developments in electronics, optics, sensing, energy, and medicine. Despite the massive momentum of experimental research in this direction, a predictive quantum-mechanical framework for describing electron-plasmon interactions in real materials is s...
| Main Authors: | , |
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| Format: | Journal article |
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American Physical Society
2016
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| _version_ | 1797063388288778240 |
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| author | Caruso, F Giustino, F |
| author_facet | Caruso, F Giustino, F |
| author_sort | Caruso, F |
| collection | OXFORD |
| description | The ability to manipulate plasmons is driving new developments in electronics, optics, sensing, energy, and medicine. Despite the massive momentum of experimental research in this direction, a predictive quantum-mechanical framework for describing electron-plasmon interactions in real materials is still missing. Here, starting from a many-body Green’s function approach, we develop an ab initio approach for investigating electron-plasmon coupling in solids. As a first demonstration of this methodology, we show that electron-plasmon scattering is the primary mechanism for the cooling of hot carriers in doped silicon, it is key to explain measured electron mobilities at high doping, and it leads to a quantum zero-point renormalization of the band gap in agreement with experiment. |
| first_indexed | 2024-03-06T20:59:07Z |
| format | Journal article |
| id | oxford-uuid:3a453100-66b1-497b-b32b-87099036cc36 |
| institution | University of Oxford |
| last_indexed | 2024-03-06T20:59:07Z |
| publishDate | 2016 |
| publisher | American Physical Society |
| record_format | dspace |
| spelling | oxford-uuid:3a453100-66b1-497b-b32b-87099036cc362022-03-26T14:00:38ZTheory of electron-plasmon coupling in semiconductorsJournal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:3a453100-66b1-497b-b32b-87099036cc36Symplectic Elements at OxfordAmerican Physical Society2016Caruso, FGiustino, FThe ability to manipulate plasmons is driving new developments in electronics, optics, sensing, energy, and medicine. Despite the massive momentum of experimental research in this direction, a predictive quantum-mechanical framework for describing electron-plasmon interactions in real materials is still missing. Here, starting from a many-body Green’s function approach, we develop an ab initio approach for investigating electron-plasmon coupling in solids. As a first demonstration of this methodology, we show that electron-plasmon scattering is the primary mechanism for the cooling of hot carriers in doped silicon, it is key to explain measured electron mobilities at high doping, and it leads to a quantum zero-point renormalization of the band gap in agreement with experiment. |
| spellingShingle | Caruso, F Giustino, F Theory of electron-plasmon coupling in semiconductors |
| title | Theory of electron-plasmon coupling in semiconductors |
| title_full | Theory of electron-plasmon coupling in semiconductors |
| title_fullStr | Theory of electron-plasmon coupling in semiconductors |
| title_full_unstemmed | Theory of electron-plasmon coupling in semiconductors |
| title_short | Theory of electron-plasmon coupling in semiconductors |
| title_sort | theory of electron plasmon coupling in semiconductors |
| work_keys_str_mv | AT carusof theoryofelectronplasmoncouplinginsemiconductors AT giustinof theoryofelectronplasmoncouplinginsemiconductors |