REACTION MODELS FOR THE EPITAXIAL-GROWTH OF III-V SEMICONDUCTORS BY CHEMICAL BEAM EPITAXY
Main Authors: | Foord, J, French, C, Levoguer, C, Davies, G |
---|---|
Format: | Journal article |
Published: |
1993
|
Similar Items
-
REACTION-MECHANISMS GOVERNING THE SELECTED-AREA GROWTH OF III-V SEMICONDUCTORS BY CHEMICAL BEAM EPITAXY
by: Foord, J, et al.
Published: (1993) -
SELECTIVE-AREA GROWTH OF III-V SEMICONDUCTORS BY CHEMICAL BEAM EPITAXY - STUDY OF REACTION-MECHANISMS
by: Davies, G, et al.
Published: (1994) -
SURFACE-REACTION MECHANISMS GOVERNING THE SELECTIVE AREA GROWTH OF III-V COMPOUND SEMICONDUCTORS BY CHEMICAL BEAM EPITAXY
by: Davies, G, et al.
Published: (1993) -
SELECTIVE AREA GROWTH OF III-V-COMPOUND SEMICONDUCTORS BY CHEMICAL BEAM EPITAXY
by: Davies, G, et al.
Published: (1992) -
An investigation of ZnSe growth by chemical beam epitaxy using modulated beam scattering and related techniques
by: Foord, J, et al.
Published: (1996)