REACTION MODELS FOR THE EPITAXIAL-GROWTH OF III-V SEMICONDUCTORS BY CHEMICAL BEAM EPITAXY

REACTION MODELS FOR THE EPITAXIAL-GROWTH OF III-V SEMICONDUCTORS BY CHEMICAL BEAM EPITAXY

Dades bibliogràfiques
Autors principals:	Foord, J, French, C, Levoguer, C, Davies, G
Format:	Journal article
Publicat:	1993

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