REACTION MODELS FOR THE EPITAXIAL-GROWTH OF III-V SEMICONDUCTORS BY CHEMICAL BEAM EPITAXY

REACTION MODELS FOR THE EPITAXIAL-GROWTH OF III-V SEMICONDUCTORS BY CHEMICAL BEAM EPITAXY

Manylion Llyfryddiaeth
Prif Awduron:	Foord, J, French, C, Levoguer, C, Davies, G
Fformat:	Journal article
Cyhoeddwyd:	1993

Eitemau Tebyg

REACTION-MECHANISMS GOVERNING THE SELECTED-AREA GROWTH OF III-V SEMICONDUCTORS BY CHEMICAL BEAM EPITAXY
gan: Foord, J, et al.
Cyhoeddwyd: (1993)

SELECTIVE-AREA GROWTH OF III-V SEMICONDUCTORS BY CHEMICAL BEAM EPITAXY - STUDY OF REACTION-MECHANISMS
gan: Davies, G, et al.
Cyhoeddwyd: (1994)

SURFACE-REACTION MECHANISMS GOVERNING THE SELECTIVE AREA GROWTH OF III-V COMPOUND SEMICONDUCTORS BY CHEMICAL BEAM EPITAXY
gan: Davies, G, et al.
Cyhoeddwyd: (1993)

SELECTIVE AREA GROWTH OF III-V-COMPOUND SEMICONDUCTORS BY CHEMICAL BEAM EPITAXY
gan: Davies, G, et al.
Cyhoeddwyd: (1992)

An investigation of ZnSe growth by chemical beam epitaxy using modulated beam scattering and related techniques
gan: Foord, J, et al.
Cyhoeddwyd: (1996)

SOME COMPARISONS OF CHEMICAL BEAM EPITAXY WITH GAS SOURCE MOLECULAR-BEAM EPITAXY
gan: Davies, G, et al.
Cyhoeddwyd: (1991)

SURFACE-REACTION MECHANISMS IN CHEMICAL BEAM EPITAXY
gan: Foord, J, et al.
Cyhoeddwyd: (1991)

SOME COMPARISONS OF CHEMICAL BEAM EPITAXY INGAAS/INP GROWTH USING TRIETHYLGALLIUM, TRIISOPROPYLGALLIUM AND TRIISOBUTYLGALLIUM SOURCES
gan: Davies, G, et al.
Cyhoeddwyd: (1994)

Chemical Beam Epitaxy of Compound Semiconductors
gan: Kolodziejski, Leslie A., et al.
Cyhoeddwyd: (2010)

Chemical Beam Epitaxy of Compound Semiconductors
gan: Kolodziejski, Leslie A., et al.
Cyhoeddwyd: (2010)

Chemical Beam Epitaxy of Compound Semiconductors
gan: Kolodziejski, Leslie A., et al.
Cyhoeddwyd: (2010)

Chemical Beam Epitaxy of Compound Semiconductors
gan: Kolodziejski, Leslie A., et al.
Cyhoeddwyd: (2010)

Chemical Beam Epitaxy of Compound Semiconductors
gan: Kolodziejski, Leslie A., et al.
Cyhoeddwyd: (2010)

CHEMICAL BEAM EPITAXY AND RELATED GROWTH TECHNIQUES 1991 - PROCEEDINGS OF THE 3RD INTERNATIONAL-CONFERENCE ON CHEMICAL BEAM EPITAXY AND RELATED GROWTH TECHNIQUES OXFORD, UK, 1-5 SEPTEMBER 1991 - PREFACE
gan: Davies, G, et al.
Cyhoeddwyd: (1992)

Reactivity patterns of stibine and trisdimethylaminoantimony precursors for chemical beam epitaxial growth and etching
gan: Foord, J, et al.
Cyhoeddwyd: (1998)

DEVELOPMENT OF CHEMICAL BEAM EPITAXY FOR THE DEPOSITION OF GALLIUM NITRIDE
gan: Kingsley, C, et al.
Cyhoeddwyd: (1995)

Epitaxy of III-V semiconductor nanowires towards optoelectronic devices
gan: Gao, Q, et al.
Cyhoeddwyd: (2009)

Growth and mechanistic studies of diamond formation by chemical beam epitaxy using methyl and acetylene precursors
gan: Foord, J, et al.
Cyhoeddwyd: (1996)

Molecular beam epitaxial growth of semiconductor heterostructures for THz electronics
gan: Ustinov Victor M.
Cyhoeddwyd: (2018-01-01)

Epitaxial Growth and Processing of Compound Semiconductors
gan: Kolodziejski, Leslie A., et al.
Cyhoeddwyd: (2010)

Epitaxial Growth and Processing of Compound Semiconductors
gan: Kolodziejski, Leslie A., et al.
Cyhoeddwyd: (2010)

The effect of V : III ratio on the growth of InN nanostructures by molecular beam epitaxy
gan: Oliver, R, et al.
Cyhoeddwyd: (2003)

Growth and investigation of epitaxial semiconductor films
gan: Cullis, A
Cyhoeddwyd: (1972)

Gas Source Molecular Beam Epitaxy of Compound Semiconductors
gan: Kolodziejski, Leslie A., et al.
Cyhoeddwyd: (2010)

Gas Source Molecular Beam Epitaxy of Compound Semiconductors
gan: Kolodziejski, Leslie A., et al.
Cyhoeddwyd: (2010)

Gas Source Molecular Beam Epitaxy of Compound Semiconductors
gan: Kolodziejski, Leslie A., et al.
Cyhoeddwyd: (2010)

Characterisation of compound semiconductors grown by molecular beam epitaxy
gan: Zhang, Peng Hua
Cyhoeddwyd: (2009)

Epitaxial growth of bronze phase titanium dioxide by molecular beam epitaxy
gan: W. Guo, et al.
Cyhoeddwyd: (2019-03-01)

Multilayer Epitaxial Heterostructures with Multi-Component III–V:Fe Magnetic Semiconductors
gan: Alexey V. Kudrin, et al.
Cyhoeddwyd: (2023-08-01)

Mid-infrared III–V semiconductor lasers epitaxially grown on Si substrates
gan: Eric Tournié, et al.
Cyhoeddwyd: (2022-06-01)

Epitaxial growth of V2O3 thin films on Si(111) by molecular beam epitaxy
gan: Alberto Binetti, et al.
Cyhoeddwyd: (2023-06-01)

Epitaxy and Step Structures on Semiconductor Surfaces
gan: Mochrie, Simon G. J., et al.
Cyhoeddwyd: (2010)

Epitaxy and Step Structures on Semiconductor Surfaces
gan: Mochrie, Simon G. J., et al.
Cyhoeddwyd: (2010)

Epitaxy and Step Structures on Semiconductor Surfaces
gan: Mochrie, Simon G. J., et al.
Cyhoeddwyd: (2010)

On the growth of semiconductor-based epitaxial and oxide films from low energy ion beams
gan: Vancauwenberghe, Olivier P. J.
Cyhoeddwyd: (2023)

Step Structures and Epitaxy on Semiconductor Surfaces
gan: Mochrie, Simon G. J., et al.
Cyhoeddwyd: (2010)

Step Structures and Epitaxy on Semiconductor Surfaces
gan: Mochrie, Simon G. J., et al.
Cyhoeddwyd: (2010)

Step Structures and Epitaxy on Semiconductor Surfaces
gan: Mochrie, Simon G. J., et al.
Cyhoeddwyd: (2010)

Growth and characterization of epitaxial tin oxide thin films by laser molecular beam epitaxy
gan: Ke, Chang
Cyhoeddwyd: (2012)

Step Structures and Epitaxy on Semiconductor Surfaces
gan: Mochrie, Simon G. J., et al.
Cyhoeddwyd: (2010)