REACTION MODELS FOR THE EPITAXIAL-GROWTH OF III-V SEMICONDUCTORS BY CHEMICAL BEAM EPITAXY
Váldodahkkit: | Foord, J, French, C, Levoguer, C, Davies, G |
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Materiálatiipa: | Journal article |
Almmustuhtton: |
1993
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Geahča maid
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REACTION-MECHANISMS GOVERNING THE SELECTED-AREA GROWTH OF III-V SEMICONDUCTORS BY CHEMICAL BEAM EPITAXY
Dahkki: Foord, J, et al.
Almmustuhtton: (1993) -
SELECTIVE-AREA GROWTH OF III-V SEMICONDUCTORS BY CHEMICAL BEAM EPITAXY - STUDY OF REACTION-MECHANISMS
Dahkki: Davies, G, et al.
Almmustuhtton: (1994) -
SURFACE-REACTION MECHANISMS GOVERNING THE SELECTIVE AREA GROWTH OF III-V COMPOUND SEMICONDUCTORS BY CHEMICAL BEAM EPITAXY
Dahkki: Davies, G, et al.
Almmustuhtton: (1993) -
SELECTIVE AREA GROWTH OF III-V-COMPOUND SEMICONDUCTORS BY CHEMICAL BEAM EPITAXY
Dahkki: Davies, G, et al.
Almmustuhtton: (1992) -
An investigation of ZnSe growth by chemical beam epitaxy using modulated beam scattering and related techniques
Dahkki: Foord, J, et al.
Almmustuhtton: (1996)