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REACTION MODELS FOR THE EPITAX...
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REACTION MODELS FOR THE EPITAXIAL-GROWTH OF III-V SEMICONDUCTORS BY CHEMICAL BEAM EPITAXY
Manylion Llyfryddiaeth
Prif Awduron:
Foord, J
,
French, C
,
Levoguer, C
,
Davies, G
Fformat:
Journal article
Cyhoeddwyd:
1993
Daliadau
Disgrifiad
Eitemau Tebyg
Dangos Staff
Eitemau Tebyg
REACTION-MECHANISMS GOVERNING THE SELECTED-AREA GROWTH OF III-V SEMICONDUCTORS BY CHEMICAL BEAM EPITAXY
gan: Foord, J, et al.
Cyhoeddwyd: (1993)
SELECTIVE-AREA GROWTH OF III-V SEMICONDUCTORS BY CHEMICAL BEAM EPITAXY - STUDY OF REACTION-MECHANISMS
gan: Davies, G, et al.
Cyhoeddwyd: (1994)
SURFACE-REACTION MECHANISMS GOVERNING THE SELECTIVE AREA GROWTH OF III-V COMPOUND SEMICONDUCTORS BY CHEMICAL BEAM EPITAXY
gan: Davies, G, et al.
Cyhoeddwyd: (1993)
SELECTIVE AREA GROWTH OF III-V-COMPOUND SEMICONDUCTORS BY CHEMICAL BEAM EPITAXY
gan: Davies, G, et al.
Cyhoeddwyd: (1992)
An investigation of ZnSe growth by chemical beam epitaxy using modulated beam scattering and related techniques
gan: Foord, J, et al.
Cyhoeddwyd: (1996)